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首页> 外文期刊>Microelectronics journal >Analytical PSpice PSpice model for SiC MOSFET based high power modules
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Analytical PSpice PSpice model for SiC MOSFET based high power modules

机译：基于SiC MOSFET的大功率模块的PSpice解析PSpice模型

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摘要

A simple analytical PSpice model has been developed and verified for a 4H-SiC based MOSFET power module with voltage and current ratings of 1200 V and 120 A. The analytical simulation model is a temperature dependent silicon carbide (SiC) MOSFET model that covers static and dynamic behavior, leakage current and breakdown voltage characteristics. The technology dependent MOSFET modeling parameters are extracted from characterization measurements, datasheets and PSpice simulations at various temperatures. The SiC MOSFET model is implemented in the PSpice circuit simulation platform using PSpice standard components and analog behavior modeling (ABM) blocks. The MOSFET switching performance is investigated under influence of different circuit elements, such as stray inductance, gate resistance and temperature, in order to study and estimate on-state and switching losses pre-requisite for design of various converter and inverter topologies. The performance of the SiC MOSFET model is fairly accurate and correlates well with the measured results over a wide temperature range. (C) 2016 Elsevier Ltd. All rights reserved.
机译：针对基于4H-SiC的MOSFET功率模块，其额定电压和电流额定值为1200 V和120 A，已经开发并验证了一种简单的分析PSpice模型。该分析仿真模型是温度相关的碳化硅（SiC）MOSFET模型，涵盖了静态和静态特性。动态特性，泄漏电流和击穿电压特性。取决于技术的MOSFET建模参数是从各种温度下的特性测量，数据表和PSpice仿真中提取的。使用PSpice标准组件和模拟行为建模（ABM）模块在PSpice电路仿真平台中实现SiC MOSFET模型。 MOSFET开关性能是在不同电路元件（例如杂散电感，栅极电阻和温度）的影响下进行研究的，以便研究和估算设计各种转换器和逆变器拓扑结构所需的导通状态和开关损耗。 SiC MOSFET模型的性能相当准确，并且在很宽的温度范围内与测量结果具有良好的相关性。 （C）2016 Elsevier Ltd.保留所有权利。

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