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Electrical and Thermal Performance of 1200 V, 100 A, 200 deg C, 4H-SiC MOSFET-based Power Switch Modules

机译：基于1200 V，100 a，200°C，4H-siC mOsFET的电源开关模块的电气和热性能

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In this paper we report the electrical and thermal performance characteristics of 1200 V, 100 A, 200-deg C (Tj), SiC MOSFET power modules configured in a dual-switch topology. Each switch-diode pair was populated by 2 x 56 mm2 SiC MOSFETs and 2 x 32 mm2 SiC JBS diodes providing the 100 A rating at 200-deg C. Static and dynamic characterization, over rated temperature and power ranges, highlights the performance potential of this technology for highly efficient drive and power conversion applications. Electrical performance comparisons were also made between SiC power modules and equivalently rated and packaged IGBT modules. Even at a modest Tj=125-deg C, conduction and dynamic loss evaluation for 20kHz, Id=100A operation demonstrated a significant efficiency advantage (38-43%) over the IGBT components. Initial reliability data also illustrates the potential for SiC technology to provide robust performance in harsh environments.

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Scofield, J.; Merrett, N.; Richmond, J.; Agarwal, A.; Leslie, S.;
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年度 2009
页码 1-6
总页数 6
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Thermal properties ; Modules(Electronics) ; Mosfet semiconductors ; Electrical properties ; Packaging ; Electric power ; Power equipment ; Silicon carbides ; Switches ; Comparison ; High temperature ; Diodes ; Conversion ; Topology;

机译：热性能;模块（电子）; mosfet半导体;电气特性;封装;电力;动力设备;碳化硅;开关;比较;高温;二极管;转换;拓扑;

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专利

1. Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of -187 deg C to 300 deg C [J] . LIN CHENG, ANANT K. AGARWAL, SARIT DHAR, Journal of Electronic Materials . 2012,第5期

机译：在-187摄氏度至300摄氏度的温度下20 A，1200 V 4H-SiC功率MOSFET的静态性能
2. High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs [J] . Lin Cheng, Sei-Hyung Ryu, Anant K. Agarwal, Materials science forum . 2012,第PTa2期

机译：1200 V，200 A 4H-SiC功率DMOSFET的高温性能
3. A 1200 V/200 a half-bridge power module based on Si IGBT/SiC MOSFET hybrid switch [J] . Lei Li, Puqi Ning, Xuhui Wen, CPSS Transactions on Power Electronics and Applications . 2018,第4期

机译：基于Si IGBT / SiC MOSFET混合开关的1200 V / 200半桥电源模块
4. Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-based Power Switch Modules [C] . James Scofield, Neil Merrett, Jim Richmond, Silicon carbide and related materials 2009 . 2010

机译：1200 V，100 A，200°C 4H-SiC MOSFET电源开关模块的电气和热性能
5. Numerical Models Development for Simulating Optical, Thermal and Electrical Performance, as Well as Structural Degradation of PV Modules [D] . Aly, Shahzada Pamir . 2019

机译：模拟光学，热电性和电气性能的数值模型开发，以及光伏模块的结构劣化
6. Modeling and Analysis of vgs Characteristics for Upper-Side and Lower-Side Switches at Turn-on Transients for a 1200V/200A Full-SiC Power Module [O] . Maosheng Zhang, Na Ren, Qing Guo, 2020

机译：1200V / 200A全SiC电源模块在开启瞬态时上侧和下侧开关的vgs特性的建模和分析
7. Modeling and Analysis of vgs Characteristics for Upper-Side and Lower-Side Switches at Turn-on Transients for a 1200V/200A Full-SiC Power Module [O] . Maosheng Zhang, Na Ren, Qing Guo, 2019

机译：用于1200V / 200A全款电源模块的开启瞬态上侧和下侧开关VGS特性的建模与分析

Electrical and Thermal Performance of 1200 V, 100 A, 200 deg C, 4H-SiC MOSFET-based Power Switch Modules

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