Modeling and Simulation of Silicon Carbide (SiC) Based Bipolar Junction Transistor

Dr.R.Seyezhai

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Modeling and Simulation of Silicon Carbide (SiC) Based Bipolar Junction Transistor

机译：基于碳化硅（SiC）的双极结晶体管的建模与仿真

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Silicon Carbide (SiC) is a promising material for high voltage and high temperature applications due to their low conduction losses and fast switching capability. This paper focuses on the simulation of static and switching characteristics of SiC Bipolar Junction Transistor (BJT developed by TranSiC) rated at 600V and 6A at different temperatures. SiC BJT is modeled in MATLAB using Ebers-Moll equations. The Ebers-Moll parameters taken for modeling SiC are: parasitic capacitances (CBC and CBE), the forward current gain βF , the early voltage and the saturation current (Is). Comparison was made between the SiC BJT and a 1200 V Si insulated gate bipolar transistor (IGBT). The simulation results are verified with experimental data. It is found that SiC BJT has much smaller conduction and switching losses than the Si IGBT.

机译：由于碳化硅（SiC）的低传导损耗和快速开关能力，它是用于高压和高温应用的有前途的材料。本文重点研究了在不同温度下额定电压为600V和6A的SiC双极结型晶体管（由TranSiC开发的BJT）的静态和开关特性。 SiC BJT使用Ebers-Moll方程在MATLAB中建模。用于模拟SiC的Ebers-Moll参数为：寄生电容（CBC和CBE），正向电流增益βF，早期电压和饱和电流（Is）。在SiC BJT和1200 V Si绝缘栅双极晶体管（IGBT）之间进行了比较。仿真结果得到了实验数据的验证。已经发现，SiC BJT的导通和开关损耗比Si IGBT小得多。

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《International Journal of Engineering Research and Applications》 |2011年第4期|共6页
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Dr.R.Seyezhai;
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Modeling and Simulation of Silicon Carbide (SiC) Based Bipolar Junction Transistor

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