Silicon carbide bipolar junction transistor having a silicon carbide protective layer on the base region and a method of manufacturing the same

• 1. 包括屏蔽区的碳化硅双极结型晶体管及制造碳化硅双极结型晶体管的方法 [P] . 中国专利： CN103283027A . 2013-09-04
• 2. 具有碳化硅钝化层的碳化硅双极结型晶体管及其制造方法 [P] . 中国专利： CN1992337A . 2007-07-04
• 3. Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof, and methods of fabricating same [P] . 美国专利： US2007145378A1 . 2007-06-28

  机译： 在其基极区域上具有碳化硅钝化层的碳化硅双极结型晶体管及其制造方法

• 4. SILICON CARBIDE BIPOLAR JUNCTION TRANSISTOR HAVING SILICON CARBIDE PASSIVATION LAYER ON BASE REGION AND METHOD OF FABRICATING THEREOF [P] . 日本专利： JP2007173841A . 2007-07-05

  机译： 具有基区的碳化硅钝化层的碳化硅双极结型晶体管及其制造方法

• 5. Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof [P] . 美国专利： US7345310B2 . 2008-03-18

  机译： 在其基极区域上具有碳化硅钝化层的碳化硅双极结型晶体管

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