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首页> 外文期刊>Thin Solid Films >Amorphous silicon germanium carbide photo sensitive bipolar junction transistor with a base-contact and a continuous tunable high current gain
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Amorphous silicon germanium carbide photo sensitive bipolar junction transistor with a base-contact and a continuous tunable high current gain

机译：具有基极接触和连续可调高电流增益的非晶碳化硅锗光敏双极结型晶体管

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摘要

In this paper, the design, fabrication and characterization of an amorphous silicon germanium carbide (a-SiGeC:H) photo sensitive bipolar junction transistor (PS-BJT) with three terminals are presented. Whereas the current gain of similar transistor devices presented in the past (Wu et al., 1984; Hwang et al., 1993; Nascetti and Caputo, 2002; Chang et al., 1985a,b; Wu et al, 1985; Hong et al., 1990) can only be controlled with photo induced charge generation, the n-i-δp-i-n structure developed features a contacted base to provide the opportunity to adjust the current gain optically and electrically, too. Electron microscope-, current-/voltage-and spectral measurements were performed to study the PS-BJT behavior and calculate the electrical and optical current gain. The spectral response maximum of the base-collector diode has a value of 170 mA/W applying a base-collector voltage of-1 V and is located at 620 nm. The base-emitter diode reaches a sensitivity of 25.7 mA/W at 530 nm with a base-emitter voltage of-3 V. The good a-Si:H transport properties are validated in a μ(τ)-product of 4.6 × 10~(-6) cm~2 V s, which is sufficient to reach a continuous base-and photo-tunable current gain of up to-126 at a base current of I_B = +10 nA and a collector-emitter voltage of V_(ce) =-3 V. The transistor obtains a maximum collector current of-65.5 μA (V_(ce) =-3 V) and + 56.2 μA (V_(ce) = + 3 V) at 10,000 lx 5300 K white-light illumination. At 3300 1x, the electrical current gain reaches a value of +100 (V_(ce) = + 2 V) at I_B = 10 nA. With a negative base current of I_B =-10 nA the electrical gain can be adjusted between 87 (V_(CE) = +2 V) and-106 (V_(ce) =-3 V), respectively. When no base charge is applied, the transistor is "off' for V_(CE) ＞-3 V. Reducing the base current increases the electrical current gain. Operating with a voltage V_(ce) of just ±2 V, the device presented in this paper obtains no optical gain with an incident light power of 0.31 μW and 578 nm wavelength. The PS-BJT exhibits promising characteristics with a maximum current density greater than 65 μA μm~(-1) and a tunable high current gain β. Possible applications exist in fields of control and drive circuits, in display and image devices, in photo interrupters, in photo sensitive matrices or in optoelectronic switches.
机译：本文介绍了具有三个端子的非晶碳化硅锗（a-SiGeC：H）光敏双极结晶体管（PS-BJT）的设计，制造和特性。而过去出现的类似晶体管器件的电流增益（Wu等，1984; Hwang等，1993; Nascetti and Caputo，2002; Chang等，1985a，b; Wu等，1985; Hong等（1990年等人）只能通过光感应电荷的产生来控制，开发的ni-δp-in结构具有接触的基极，从而也提供了通过光学和电气方式调节电流增益的机会。进行了电子显微镜，电流/电压和光谱测量，以研究PS-BJT的行为并计算电流和光电流增益。施加-1 V的基极-集电极电压时，基极-集电极二极管的最大光谱响应值为170 mA / W，位于620 nm。基极-发射极二极管在530 nm处的灵敏度为25.7 mA / W，基极-发射极电压为3V。良好的a-Si：H传输特性在4.6×10的μ（τ）乘积中得到验证〜（-6）cm〜2 V s，在I_B = +10 nA的基极电流和V _（-）的集电极-发射极电压下，足以达到高达-126的连续基极和光可调电流增益ce）= -3 V.在10,000 lx 5300 K白光下，晶体管获得的最大集电极电流为-65.5μA（V_（ce）= -3 V）和+ 56.2μA（V_（ce）= + 3 V）照明。在3300 1x处，电流增益在I_B = 10 nA时达到+100（V_（ce）= + 2 V）的值。在负基极电流I_B = -10 nA的情况下，可以分别在87（V_（CE）= +2 V）和-106（V_（ce）= -3 V）之间调节电增益。如果不施加基极电荷，则晶体管在V_（CE）＞ -3 V时处于“关断”状态。降低基极电流会增加电流增益；在仅±2 V的电压V_（ce）下工作本文的入射光功率为0.31μW，波长为578 nm时，没有获得任何光学增益，PS-BJT具有最大的电流密度大于65μAμm〜（-1）且具有可调的高电流增益β的良好特性。可能的应用存在于控制和驱动电路领域，显示和图像设备，光电断路器，光敏矩阵或光电开关中。

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  • 来源
    《Thin Solid Films》 |2014年第2期|430-437|共8页
  • 作者

    A. Bablich; C. Merfort; J. Eliasz; H. Schaefer-Eberwein; P. Haring-Bolivar; M. Boehm;

  • 作者单位

    Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3,57076 Siegen, Germany;

    Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3,57076 Siegen, Germany;

    Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3,57076 Siegen, Germany;

    Department of Electrical and Computer Engineering, Institute of High Frequency and Quantum Electronics, University ofSiegen, Hoelderlinstrasse 3,57076 Siegen, Germany;

    Department of Electrical and Computer Engineering, Institute of High Frequency and Quantum Electronics, University ofSiegen, Hoelderlinstrasse 3,57076 Siegen, Germany;

    Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3,57076 Siegen, Germany;

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  • 正文语种 eng
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  • 关键词

    Amorphous silicon; Bipolar transistor; Phototransistor; Photonic device; Photoconductor; Thin film; Base connection; Current gain;

    机译：非晶硅双极晶体管;光电晶体管光子器件;光电导体薄膜;基础连接;电流增益;

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