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Characterization Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

机译：用于温度传感器的碳化硅结型场效应晶体管的特性建模和设计参数辨识

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摘要

Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon), permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET) as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned.
机译：传感器技术正在朝着提供具有高温功能的器件的宽带隙半导体发展。实际上，碳化硅的更高的热导率（是硅的三倍）可以实现更好的散热，并可以实现更好的冷却和温度管理。尽管已经发布了许多温度传感器，但是在研究作为温度传感器的碳化硅结型场效应器件（SiC-JFET）方面的投入很少。 SiC-JFET器件现在已经足够成熟，并且已经接近商业化。使用其特定性能与温度的关系是本文的重点。 SiC-JFET的输出电流-电压特性是在不同温度下表征的。成功提取了饱和电流及其导通电阻与温度的关系。证明了这些参数与绝对温度成正比。还提出了基于物理学的模型。介绍了导通电阻和饱和电流与温度之间的关系。对实验数据和模拟结果进行了比较研究。需要注意的是，就温度传感器而言，建议的模型和实验结果反映出成功的协议。

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