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Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

机译:用于高温应用的基于碳化硅的氢气传感器

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摘要

We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.
机译:我们研究了具有金属-绝缘体-半导体(MIS)结构的SiC基氢气传感器,用于汽车,化学和石油工业等领域的高温过程监控和泄漏检测应用。在这项工作中,出于提高灵敏度的目的,开发了薄的氧化钽(Ta2O5)层,因为氧化钽在高温下具有良好的稳定性,并且对氢气具有高渗透性。碳化硅(SiC)用作高温应用的基材。我们制造了基于Pd / Ta2O5 / SiC的氢气传感器,并在室温至500°C的温度范围内分析了它们的I-V特性和电容响应特性对氢气浓度的依赖性。根据结果​​,我们的传感器在高温氢气检测方面显示出令人鼓舞的性能。

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