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首页> 外文期刊>Power Electronics, IET >Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors
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Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors

机译：基于绝缘体上硅的高压高温集成电路栅极驱动器，用于基于碳化硅的功率场效应晶体管

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摘要

Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the powerto-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC?DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8-mm, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit''s maximum gate drive supply can be 40 V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20 kHz and the duty cycle can be varied from 0 to 100%. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200u000b0;C. The circuit underwent numerous temperature cycles with negligible performance degradation.
机译：基于碳化硅（SiC）的场效应晶体管（FET）作为电力电子电路中的开关元件而日益普及，该电力电子电路是为混合动力汽车，飞机，测井，地热发电等高温环境而设计的。与其他任何功率开关一样，基于SiC的功率器件还需要栅极驱动器电路以将其与逻辑单元接口。栅极驱动器电路靠近电源开关的放置是最佳的，以最大程度地降低系统复杂性。栅极驱动器电路在恶劣环境中的成功运行，尤其是在没有散热片或散热片极少或没有散热片的情况下，尤其是在没有功率放大器的情况下，可以提高功率体积比以及功率转换模块（例如DC）的功率重量比。 DC转换器，逆变器等。已经使用市售的0.8mm，2-多金属和三金属双极互补金属氧化物半导体（CMOS）-双扩散金属氧化物半导体（DMOS）工艺。原型电路的最大栅极驱动电源可以为40 V，具有2.3A的峰值拉/灌电流驱动能力。由于驱动范围广，该栅极驱动器IC可用于驱动各种SiC FET开关（常关断金属氧化物半导体场效应晶体管（MOSFET）和常开结型场效应晶体管（JFET））。开关频率为20 kHz，占空比可以在0到100％之间变化。该电路已成功通过SiC功率MOSFET和JFET进行了测试，没有任何散热器和冷却机制。在这些测试期间，SiC开关保持在室温下，驱动电路的环境温度升至200u000b0; C。该电路经历了许多温度循环，而性能下降可忽略不计。

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