...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials science forum >Investigation of 4H-SiC Extraction-Enhanced Vertical Insulated-Gate Bipolar Transistor with Lightly Doped Extractor in Collector Region
【24h】

Investigation of 4H-SiC Extraction-Enhanced Vertical Insulated-Gate Bipolar Transistor with Lightly Doped Extractor in Collector Region

机译：集电极区轻掺杂4H-SiC萃取增强垂直绝缘栅双极晶体管的研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper proposes a new N-type 4H-SiC extraction-enhanced vertical insulated-gate bipolar transistor (Esup2/supVIGBT), which uses a partial Schottky contact to the collector region bottom surface as a carrier extractor to enhance the carrier extraction, so that the switching performance will be improved. TCAD simulation shows that, at an operation frequency of 250 kHz, the Esup2/supVIGBT offers a turn-off loss decrease of 69.2% and a total energy loss in a single period reduction of 34.4% when compared with conventional field-stop 4H-SiC IGBTs. With further specific optimization, the proposed structure consumes less energy in a much wider frequency range. The simulation results indicate that this new type of IGBT performs better in high frequency applications.
机译：本文提出了一种新型的N型4H-SiC萃取增强型垂直绝缘栅双极型晶体管（E 2 VIGBT），该晶体管利用集电极区底表面的部分肖特基接触作为载流子提取器。增强载波提取，从而提高开关性能。 TCAD仿真显示，在250 kHz的工作频率下，与相比，E 2 VIGBT的关断损耗降低了69.2％，单周期总能量损耗降低了34.4％。传统的场停止4H-SiC IGBT。通过进一步的具体优化，提出的结构在更宽的频率范围内消耗的能量更少。仿真结果表明，这种新型IGBT在高频应用中表现更好。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号