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首页> 外文期刊>Journal of Materials Science and Chemical Engineering >Catalyst-Free Growth of Graphene by Microwave Surface Wave Plasma Chemical Vapor Deposition at Low Temperature
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Catalyst-Free Growth of Graphene by Microwave Surface Wave Plasma Chemical Vapor Deposition at Low Temperature

机译：微波表面波等离子体化学气相沉积法在低温下无催化剂地生长石墨烯

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Catalyst-free graphene films has been synthesized by microwave (MW) surface wave plasma (SWP) chemical vapor deposition (CVD) using hydrogenated carbon source on silicon substrates at low temperature (500℃). The synthesized process is simple, low-cost and possible for application on transparent electrodes, gas sensors and thin film resistors. Analytical methods such as Raman spectroscopy, transmission electron microscopy (TEM) and four points prove resistivity measurement and UV-VIS-NIR spectroscopy were employed to characterize properties of the graphene films. The formation of multilayer of graphene on silicon substrate was confirmed by Raman spectroscopy and TEM. It is possible to grow graphene directly on silicon substrate (without using catalyst) due to high radical density of MW SWP CVD. In addition, we also observed that the hydrogen had significant role for quality of graphene.
机译：利用微波（MW）表面波等离子体（SWP）化学气相沉积（CVD）技术，在低温（500℃）下使用氢化碳源在硅基板上合成了无催化剂的石墨烯薄膜。合成工艺简单，成本低廉，可用于透明电极，气体传感器和薄膜电阻器。诸如拉曼光谱，透射电子显微镜（TEM）和四点分析等方法证明了电阻率测量和UV-VIS-NIR光谱用于表征石墨烯薄膜的特性。通过拉曼光谱和TEM证实了石墨烯在硅衬底上的多层形成。由于MW SWP CVD的高自由基密度，有可能直接在硅基板上生长石墨烯（无需使用催化剂）。此外，我们还观察到氢对石墨烯的质量具有重要作用。

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