The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor

Gafur Gulyamov; A. G. Gulyamov; A. Q. Ergashev; B. T. Abdulazizov

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The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor

机译：相图在半导体中生成重组过程研究中的应用

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Theoretical investigation of generation-recombination processes in silicon, which has a lifetime of charge carriers 10-3 s and capture cross sections of 10-16 sm2. For the study uses a method of phase portraits, which are widely used in the theory of vibrations. It is shown that the form of phase portraits strongly depends on the frequency of exposure to the external variable deformation.

机译：硅中产生-重组过程的理论研究，硅的载流子寿命为10-3 s，捕获截面为10-16 sm2。在研究中，使用了相像法，该相像法在振动理论中得到了广泛的应用。结果表明，相像的形式在很大程度上取决于暴露于外部变量变形的频率。

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《Journal of Modern Physics》 |2015年第13期|共6页
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Gafur Gulyamov; A. G. Gulyamov; A. Q. Ergashev; B. T. Abdulazizov;
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中图分类物理学;
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2. THE INFLUENCE OF DISLOCATIONS ON GENERATION-RECOMBINATION PROCESSES IN NARROW-BANDGAP SEMICONDUCTORS [J] . K. JOZWIKOWSKI, T. NIEDZIELA Electron Technology . 2000,第4期

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机译：使用相位肖像用于研究半导体中的发电重组过程

The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor

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