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Near-infrared emitting CdTeSe alloyed quantum dots: Raman scattering, photoluminescence and single-emitter optical properties

机译:发射近红外光的CdTeSe合金量子点:拉曼散射,光致发光和单发射体光学性质

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The synthesis of ternary core/shell zinc-blende CdTeSe/ZnSe quantum dots with optimal synthesis parameters is analyzed. For the synthesis of the ternary-alloy CdTeSe core, a temperature around 260 °C is shown to allow a good reaction of both the Te and Se reagents, while for lower temperatures mostly-CdTe quantum dots are synthesized. At this temperature, by changing the ratio of the Te and Se reagents, the composition can be tuned from Te-rich to Se-rich while keeping a constant quantum dot size. The photoluminescence wavelength expands up to 860 nm for the core CdTeSe and 900 nm for the CdTeSe/ZnSe samples, a near-infrared bandgap with potential applications in photovoltaics. The use of Raman spectroscopy is proved especially useful to analyze the composition of the alloy quantum dots, with the presence of two longitudinal-optical phonon lines corresponding respectively to CdTe and CdSe vibrations. For single core/shell CdTeSe/ZnSe quantum dots, perfect single-photon emission is demonstrated with good stability and low blinking, and a long decay time of 110 ns suggesting high luminescence quantum yield.
机译:分析了具有最佳合成参数的三元核/壳共混锌CdTeSe / ZnSe量子点的合成。对于三元合金CdTeSe核的合成,显示大约260°C的温度可使Te和Se试剂良好反应,而对于较低温度,主要合成了CdTe量子点。在此温度下,通过改变Te和Se试剂的比例,可以在保持恒定的量子点尺寸的同时将组成从富Te变为富Se。核心CdTeSe的光致发光波长扩展到860 nm,CdTeSe / ZnSe样品的光致发光波长扩展到900 nm,这是一种近红外带隙,在光电技术中具有潜在的应用。事实证明,在存在两条分别对应于CdTe和CdSe振动的纵向光学声子线的情况下,拉曼光谱的使用对分析合金量子点的成分特别有用。对于单核/壳CdTeSe / ZnSe量子点,完美的单光子发射具有良好的稳定性和低闪烁性,并且110 ns的长衰减时间表明发光量子产率高。

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