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首页> 外文期刊>RSC Advances >Near-infrared emitting CdTeSe alloyed quantum dots: Raman scattering, photoluminescence and single-emitter optical properties
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Near-infrared emitting CdTeSe alloyed quantum dots: Raman scattering, photoluminescence and single-emitter optical properties

机译：近红外发射CDTESE合金量子点：拉曼散射，光致发光和单发射器光学性能

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摘要

The synthesis of ternary core/shell zinc-blende CdTeSe/ZnSe quantum dots with optimal synthesis parameters is analyzed. For the synthesis of the ternary-alloy CdTeSe core, a temperature around 260 degrees C is shown to allow a good reaction of both the Te and Se reagents, while for lower temperatures mostly-CdTe quantum dots are synthesized. At this temperature, by changing the ratio of the Te and Se reagents, the composition can be tuned from Te-rich to Se-rich while keeping a constant quantum dot size. The photoluminescence wavelength expands up to 860 nm for the core CdTeSe and 900 nm for the CdTeSe/ZnSe samples, a near-infrared bandgap with potential applications in photovoltaics. The use of Raman spectroscopy is proved especially useful to analyze the composition of the alloy quantum dots, with the presence of two longitudinal-optical phonon lines corresponding respectively to CdTe and CdSe vibrations. For single core/shell CdTeSe/ZnSe quantum dots, perfect single-photon emission is demonstrated with good stability and low blinking, and a long decay time of 110 ns suggesting high luminescence quantum yield.
机译：分析了三元核心/壳锌-Blende CDTESE / ZnSe量子点的合成，具有最佳合成参数。对于三元合金CDTEESE核的合成，示出了左右260℃的温度，以允许TE和SE试剂的良好反应，而对于较低的温度，合成较低的温度量子点。在该温度下，通过改变Te和Se试剂的比例，可以从富含Te的富含TE的富含TE的组合物，同时保持恒定量子点尺寸。光致发光波长为CDTESE / ZNSE样品的核心CDTEESE和900nm的光致发光波长扩展到860nm，具有近红外带隙，具有在光伏中的潜在应用。证明使用拉曼光谱法特别适用于分析合金量子点的组成，其中两条对应于CdTe和Cdse振动的两个纵向光学声音线。对于单芯/外壳CDTESE / ZNSE量子点，完美的单光子发射具有良好的稳定性和低闪烁，并且长衰减时间为110ns，表明高发光量子产量。

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  • 来源
    《RSC Advances》 |2017年第76期|共9页
  • 作者

    Le Xuan Hung; Bassene Pascal D.; Pham Nam Thang; Nguyen Thu Loan; de Marcillac Willy Daney; Dhawan Amit Raj; Feng Fu; Esparza-Villa Juan U.; Nguyen Thi Thuc Hien; Nguyen Quang Liem; Coolen Laurent; Pham Thu Nga;

  • 作者单位

    Duy Tan Univ Inst Res &

    Dev Danang Vietnam;

    UPMC Univ Paris 06 Sorbonne Univ UMR 7588 Inst NanoSci Paris INSP F-75005 Paris France;

    Vietnam Acad Sci &

    Technol Grad Univ Sci &

    Technol 18 Hoang Quoc Viet Rd Hanoi Vietnam;

    UPMC Univ Paris 06 Sorbonne Univ UMR 7588 Inst NanoSci Paris INSP F-75005 Paris France;

    UPMC Univ Paris 06 Sorbonne Univ UMR 7588 Inst NanoSci Paris INSP F-75005 Paris France;

    UPMC Univ Paris 06 Sorbonne Univ UMR 7588 Inst NanoSci Paris INSP F-75005 Paris France;

    UPMC Univ Paris 06 Sorbonne Univ UMR 7588 Inst NanoSci Paris INSP F-75005 Paris France;

    UPMC Univ Paris 06 Sorbonne Univ UMR 7588 Inst NanoSci Paris INSP F-75005 Paris France;

    Duy Tan Univ Inst Res &

    Dev Danang Vietnam;

    Vietnam Acad Sci &

    Technol Inst Mat Sci 18 Hoang Quoc Viet Rd Hanoi Vietnam;

    UPMC Univ Paris 06 Sorbonne Univ UMR 7588 Inst NanoSci Paris INSP F-75005 Paris France;

    Duy Tan Univ Inst Res &

    Dev Danang Vietnam;

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  • 正文语种 eng
  • 中图分类 化学;
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