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首页> 外文期刊>RSC Advances >InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters
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InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters

机译：MoS 2 大面积外延生长InGaN / GaN纳米线的性能

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The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ～2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm?2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.
机译：最近对广泛的层状过渡金属二硫化二氢（TMDC）的研究为器件设计和应用创造了一个新时代。特别地，利用分层TMDC的范德华外延（vdWE）的概念具有扩大外延生长技术家族的潜力，超越了传统方法。我们首次在大面积MoS 2 上报告单片高功率，无下垂且波长可调的InGaN / GaN纳米线发光二极管（NW-LED）。通过硫化整个Mo基片形成的> 层。 MoS 2 既用作高质量GaN纳米线生长的缓冲层，又用作外延剥离的牺牲层。通过准vdWE在氮化的MoS 2 上获得的LED显示的低开启电压约为2 V，光输出功率高达1.5 mW由于高的热导率和电导率，发射的电流超出了“绿色间隙”，没有效率下降到电流注入1 A（400 A cm ？2 ）金属基板。氮化物/层状TMDC /金属异质结构平台的发现也为高性能器件，超薄型光电，能量收集以及实际应用中的基板可重复使用性带来了同时增长高质量氮化物的无与伦比的机会。

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