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首页> 外文期刊>RSC Advances >InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters
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InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters

机译：IngaN / GaN纳米线在大型磁光发光器中的大面积MOS2上外延

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摘要

The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of similar to 2 V and light output power up to 1.5 mW emitting beyond the "green gap", without an efficiency droop up to the current injection of 1 A (400 A cm(-2)), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.
机译：最近关于各种分层过渡金属二甲基甲基化物（TMDC）的研究已经为器件设计和应用创造了一种新的时代。特别地，使用分层TMDS的范德华腰围外延（VDWE）的概念具有促进超出常规方法的外延生长技术的潜力。我们首次报告通过硫化整个Mo衬底形成的大面积MOS2层上的整体高功率，无下坡和波长可调谐的Ingan / GaN纳米线发光二极管（NW-LED）。 MOS2用作高质量GaN纳米线的缓冲层和用于外延剥离的牺牲层。经由准vdWE上氮化的MoS 2中得到的发光二极管表现出低的导通的类似的电压为2V和光输出功率高达1.5毫瓦的发光超出了“绿色间隙”，不具有效率下垂高达1个A的电流注入（借助于金属基板的高热和电导率，400A厘米（-2））。氮化物/分层TMDCS /金属异质结构平台的发现也是无与伦比的同时高性能氮化物生长的机会，用于高性能装置，超级型材光电子，能量收集以及用于实际应用的基材可重用性。

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