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首页> 外文期刊>RSC Advances >Highly efficient UV-sensing properties of Sb-doped ZnO nanorod arrays synthesized by a facile, single-step hydrothermal reaction
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Highly efficient UV-sensing properties of Sb-doped ZnO nanorod arrays synthesized by a facile, single-step hydrothermal reaction

机译：通过简便的一步式水热反应合成的掺Sb的ZnO纳米棒阵列的高效UV传感特性

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The synthesis of electrical and optical property-modulated, low-dimensional metal oxide semiconductors has been adopted for the development of nanodevices. However, conventional modulation methods, such as doping and alloying, generally require rather complex processes, such as multi-step high-temperature reactions, gas-phase growth, high-vacuum processes, etc. Alternatively, in the current study, the facile and cost-effective synthesis of Sb-doped ZnO nanorod arrays (NRAs) is achieved using a simple hydrothermal growth process at 95?°C. Through a single-step reaction, Sb atoms are substitutionally doped at the Zn atom sites with control of the Sb concentration. Sb dopants and Sb-induced oxygen vacancies increase the electron concentration in the ZnO NRAs, enhancing the electrical conductivity of the ZnO NRAs and inducing the further adsorption of ambient oxygen molecules on the nanorod surface. Upon UV irradiation of the highly oxygen-adsorbed, Sb-doped ZnO NRAs, the desorption of oxygen induces greater conductivity changes compared to the undoped samples. Based on this enhanced resistivity change, UV sensor devices were fabricated, and an improved reversible UV sensing performance was observed, with a ～9-fold enhancement in the photocurrent of the ZnO NRAs after Sb doping. Moreover, UV sensing is achieved even under an extremely low bias of 10–6 V, suggesting the promising application of this material in extremely low-power UV sensor devices.
机译：电学和光学特性调制的低维金属氧化物半导体的合成已被用于纳米器件的开发。但是，常规的调制方法（例如掺杂和合金化）通常需要相当复杂的过程，例如多步高温反应，气相生长，高真空过程等。当前的研究表明，通过简单的95°C水热生长工艺，可以轻松，经济地合成掺Sb的ZnO纳米棒阵列（NRA）。通过单步反应，在控制Sb浓度的情况下，Sb原子被取代掺杂在Zn原子位置。 Sb掺杂剂和Sb诱导的氧空位增加了ZnO NRA中的电子浓度，增强了ZnO NRA的电导率，并诱导了周围氧分子在纳米棒表面上的进一步吸附。与未掺杂样品相比，在高氧吸附，Sb掺杂的ZnO NRA的紫外线照射下，氧的解吸引起更大的电导率变化。基于这种增强的电阻率变化，制造出了紫外线传感器器件，并观察到了改善的可逆紫外线感测性能，Sb掺杂后ZnO NRAs的光电流提高了约9倍。此外，即使在10-6 V的极低偏置下也能实现UV感测，这表明该材料在极低功率的UV传感器设备中的应用前景广阔。

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