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首页> 外文期刊>RSC Advances >Facile synthesis of various epitaxial and textured polymorphs of vanadium oxide thin films on the (0006)-surface of sapphire substrates
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Facile synthesis of various epitaxial and textured polymorphs of vanadium oxide thin films on the (0006)-surface of sapphire substrates

机译：蓝宝石衬底（0006）-表面上钒氧化物薄膜的各种外延和织构多晶型物的简便合成

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摘要

Extensive attention has been paid to vanadium oxide polymorphs because of their potential to be used in applications in information and optoelectronic devices, as well as in energy harvesting technologies. However, vanadium oxides always form a very complex phase diagram; in particular, it is still challenging to synthesize pure vanadium oxide epitaxial polymorphs on low-cost, transparent and wafer-scale substrates. Here, we demonstrate the growth of epitaxial polymorphs of vanadium oxide (VO2 (R, M1 and their mixed phase), and V2O3) and (001)-textured VO2 (B) thin films on the (0006) surface of sapphire without selecting specific substrate orientations. This is achieved by controlling the vanadium arrival rate via sputtering power and oxidation of vanadium atoms through the partial pressure of oxygen using magnetron sputtering techniques, which enables wafer-scale production of the vanadium oxide thin films on the sapphire substrates. Growth phase diagrams of the various polymorphs are also developed for guiding device design based on the vanadium oxide thin films. This work paves a way towards practical applications of vanadium oxide thin films on chemically stable, transparent and low-cost sapphire substrates.
机译：钒氧化物多晶型物已引起广泛关注，因为它们有潜力用于信息和光电设备以及能量收集技术中。但是，钒氧化物总是形成非常复杂的相图。特别是，在低成本，透明和晶圆级基板上合成纯钒氧化物外延多晶型物仍然是一项挑战。在这里，我们证明了钒氧化物（VO 2 （R，M1及其混合相）和V 2 O 3 ）和（001）纹理的VO 2 （B）薄膜无需选择特定的衬底方向即可在蓝宝石的（0006）表面上进行选择。这是通过利用溅射功率控制钒的到达速率并通过磁控溅射技术通过氧的分压控制钒原子的氧化来实现的，钒的晶圆上可以大规模生产蓝宝石上的氧化钒薄膜基材。还开发了各种多晶型物的生长相图，用于基于氧化钒薄膜的器件设计。这项工作为在化学稳定，透明和低成本蓝宝石衬底上实际应用氧化钒薄膜铺平了道路。

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