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Textured substrate for epitaxial film formation and surface improving method of textured substrate for epitaxial film formation

机译:用于外延膜形成的纹理化基板以及用于外延膜形成的纹理化基板的表面改进方法

摘要

Orientation degree and smoothness of a substrate surface better than those of conventional ones are provided in a textured substrate for epitaxial thin film growth. The present invention is a textured substrate for epitaxial film formation, including a crystal orientation improving layer made of a metal thin film of 1 to 5000 nm in thickness on the surface of the textured substrate for epitaxial film formation having a textured metal layer at least on one surface, wherein differences between orientation degrees (Δφ and Δω) in the textured metal layer surface and orientation degrees (Δφ and Δω) in the crystal orientation improving layer surface are both 0.1 to 3.0°. Further, when another metal different from the metal constituting this textured substrate crystal orientation improving layer is added equivalent to a thin film which is 30 nm or less, and subsequently is subjected to heat treatment, the smoothness of that surface can be improved. At this time, the surface roughness of the substrate surface becomes 20 nm or less.
机译:在用于外延薄膜生长的纹理化衬底中提供了比传统衬底更好的衬底表面的取向度和光滑度。本发明是一种外延膜形成用的纹理化基板,其特征在于,在外延膜形成用纹理化基板的表面上至少具有至少一个具有纹理化金属层的表面具有由厚度为1〜5000nm的金属薄膜构成的晶体取向改善层。一种表面,其中在纹理化的金属层表面中的取向度(Δφ和Δω)与在晶体取向改善层表面中的取向度(Δφ和Δω)之间的差均为0.1至3.0°。此外,当与构成该纹理化的基板晶体取向改善层的金属不同的另一种金属等效地添加到30nm或更小的薄膜中,然后进行热处理时,可以改善该表面的光滑度。此时,基板表面的表面粗糙度变为20nm以下。

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