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Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition

机译：等离子体增强化学气相沉积中氩气等离子体促进SiO2 / Si上垂直石墨烯的生长

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This study investigates the growth promotion of vertically oriented graphene in plasma-enhanced chemical vapor deposition through Ar plasma treatment. Combined with various substrate treatments, including hydrofluoric acid etching and oxidation after Ar plasma treatment, Ar plasma pretreatment promotes vertical growth through the microcavity on the rough substrate surface and the active growth sites. The microcavity affects the strain distribution and defects of as-deposited planar films, which benefit the transition of 2D deposition to 3D vertical growth. A growth model on the effect of Ar plasma pretreatment is proposed.
机译：本研究研究了通过Ar等离子体处理在等离子体增强化学气相沉积中垂直取向石墨烯的生长促进作用。结合各种基板处理，包括氢氟酸蚀刻和Ar等离子体处理后的氧化，Ar等离子体预处理可通过粗糙基板表面上的微腔和活性生长部位促进垂直生长。微腔影响沉积的平面膜的应变分布和缺陷，这有利于2D沉积向3D垂直生长的过渡。提出了一种对氩等离子体预处理效果的生长模型。

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