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Decreasing graphene synthesis temperature by catalytic metal engineering and thermal processing

机译：通过催化金属工程和热处理降低石墨烯的合成温度

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Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promise for large-scale graphene growth, but the high growth temperature, typically 1050 °C, requires precise and expensive equipment and makes the direct deposition of graphene in electronic device manufacturing processes unfeasible due to the severe physical damage to substrates. Here we demonstrate a facile route to synthesize graphene by catalytic metal engineering and thermal processing. The engineered catalytic metal (copper) with carbon implantation could lower the synthetic temperature to 700 °C. And the resulting graphene shows few defects, uniform morphology and high carrier mobility, comparable to CVD graphene grown at 1050 °C. This technique could expand the applications of graphene in electronic and optoelectronic device manufacturing and is compatible with conventional microelectronics technology.
机译：从气态碳氢化合物来源进行的化学气相沉积（CVD）已显示出大规模石墨烯生长的巨大希望，但是高生长温度（通常为1050°C）需要精密且昂贵的设备，并且使石墨烯在电子设备制造过程中的直接沉积不可行由于对基材的严重物理损坏。在这里，我们展示了一种通过催化金属工程和热处理合成石墨烯的简便方法。经过工程设计的带有碳注入的催化金属（铜）可以将合成温度降至700°C。所得石墨烯与在1050°C下生长的CVD石墨烯相比，几乎没有缺陷，形态均匀且载流子迁移率高。该技术可以扩展石墨烯在电子和光电子器件制造中的应用，并且与常规微电子技术兼容。

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