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Decreasing graphene synthesis temperature by catalytic metal engineering and thermal processing

机译：通过催化金属工程和热处理降低石墨烯合成温度

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摘要

Chemical vapor deposition (CVD) fromgaseous hydrocarbon sources has shown great promise for large-scale graphene growth, but the high growth temperature, typically 1050 degrees C, requires precise and expensive equipment and makes the direct deposition of graphene in electronic device manufacturing processes unfeasible due to the severe physical damage to substrates. Here we demonstrate a facile route to synthesize graphene by catalytic metal engineering and thermal processing. The engineered catalytic metal (copper) with carbon implantation could lower the synthetic temperature to 700 degrees C. And the resulting graphene shows few defects, uniform morphology and high carrier mobility, comparable to CVD graphene grown at 1050 degrees C. This technique could expand the applications of graphene in electronic and optoelectronic device manufacturing and is compatible with conventional microelectronics technology.
机译：化学气相沉积（CVD）从高级石墨烯生长所示，高生长温度，通常为1050℃，需要精确且昂贵的设备，并且在电子设备制造过程中直接沉积石墨烯的直接沉积 对底物的严重物理损害。 在这里，我们证明了通过催化金属工程和热处理合成石墨烯的容易路线。 具有碳注入的工程催化金属（铜）可以将合成温度降低至700℃。并且所得石墨烯显示出少量缺陷，均匀的形态和高载体迁移率，与1050℃的CVD石墨烯相当。该技术可以扩大 石墨烯在电子和光电器件制造中的应用，与传统的微电子技术相容。

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  • 来源
    《RSC Advances》 |2018年第3期|共4页
  • 作者

    Zheng Li; Cheng Xinhong; Ye Peiyi; Shen Lingyan; Wang Qian; Zhang Dongliang; Gu Ziyue; Zhou Wen; Wu Dengpeng; Yu Yuehui;

  • 作者单位

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Changning Rd 865 Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Changning Rd 865 Shanghai 200050 Peoples R China;

    Univ Calif Los Angeles Dept Mat Sci &

    Engn Los Angeles CA 90095 USA;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Changning Rd 865 Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Changning Rd 865 Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Changning Rd 865 Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Changning Rd 865 Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Changning Rd 865 Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Changning Rd 865 Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Changning Rd 865 Shanghai 200050 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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