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首页> 外文期刊>RSC Advances >Effect of in situ stress on grain growth and texture evolution in sputtered YSZ/Si films
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Effect of in situ stress on grain growth and texture evolution in sputtered YSZ/Si films

机译：原位应力对溅射YSZ / Si薄膜晶粒生长和织构演变的影响

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Yttria stabilized zirconia (YSZ) films are being used both as functional oxide and buffer layers for integration of various other functional oxide films on Si substrates. As functional properties of these oxides are highly anisotropic in nature, highly oriented films are essential to realizing their fascinating properties. (111) and (100) textured YSZ films have been deposited on Si substrates by reactive-direct current (R-DC) sputtering. Annealing of these films leads to grain growth and improvement in texture. However, it strongly depends on the growth stresses developed during deposition of these films. Depending on stress harnessing in films/stacks, the texture was improved from rocking curve FWHM of 16° to 7° and 25° to 15° for (111) and (100) YSZ films respectively. A detailed analysis of the relation between stress and grain growth is carried out using an energy balance model. We have found that grain growth is limited by kinetics, though it should be possible from a thermodynamic viewpoint. It is observed that higher initial compressive stress aids significant grain growth (～150%) and texture-improvement (～57%) on annealing.
机译：氧化钇稳定的氧化锆（YSZ）膜同时用作功能性氧化物和缓冲层，用于在Si基板上集成各种其他功能性氧化物膜。由于这些氧化物的功能性质本质上是高度各向异性的，因此高度取向的薄膜对于实现其引人入胜的性质至关重要。 （111）和（100）织构化的YSZ膜已通过反应性直流（R-DC）溅射沉积在Si基板上。这些膜的退火导致晶粒生长和质地改善。但是，这严重取决于在沉积这些薄膜期间产生的生长应力。取决于膜/叠层中的应力控制，对于（111）和（100）YSZ膜，织构分别从16°至7°的摇摆曲线FWHM和25°至15°的摇摆曲线得以改善。使用能量平衡模型对应力和晶粒长大之间的关系进行了详细分析。我们已经发现晶粒的生长受到动力学的限制，尽管从热力学的观点来看应该是可能的。可以看出，较高的初始压应力有助于退火时显着的晶粒生长（〜150％）和织构改善（〜57％）。

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