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Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

机译：基于光谱的Ge2Sb2Te5薄膜的光学常数获取和相变特性

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摘要

In this work, phase change chalcogenide Ge _(2) Sb _(2) Te _(5) (GST) thin films were fabricated by magnetron sputtering. The optical properties, especially the optical constants (refractive index and extinction coefficient), of such alloys were systematically studied by investigating their thermally and photo-thermally induced switching between different phases. The results show that GST films are highly tunable in microstructure and optical constants, either by post-annealing at 160?°C, 200 °C, 250 °C and 350 °C, respectively, or by laser irradiation of 1 mW, 3 mW, 5 mW and 10 mW power with beam diameter of 7 μm at 532 nm, respectively. From the structural analysis, we can clearly observe different crystallinities and chemical bonding in the different post-treated GST films. The optical constants of GST films under various phases were obtained from spectrophotometry, by fitting their transmittance data with the Tauc–Lorentz (TL) dispersion model. The refractive index and extinction coefficient exhibit notable change upon annealing and laser irradiation, specifically at 1550 nm, from 3.85 (amorphous) to 6.5 (crystalline) in refractive index. The optical constants have been proved capable of fine tuning via the laser irradiation method. Hence, the pronounced adjustability in optical properties due to rapid and repeatable phase change render GST suitable for tunable photonic devices.
机译：在这项工作中，通过磁控溅射制备了相变硫族化物Ge _（2）Sb _（2）Te _（5）（GST）薄膜。通过研究它们在不同相之间的热和光热诱导转换，系统地研究了这类合金的光学性质，尤其是光学常数（折射率和消光系数）。结果表明，通过分别在160？C，200°C，250°C和350°C进行后退火，或通过1 mW，3 mW的激光辐照，GST膜在微观结构和光学常数方面具有很高的可调谐性。功率分别为5 mW和10 mW，光束直径在532 nm处为7μm。从结构分析中，我们可以清楚地观察到不同后处理GST膜的不同结晶度和化学键合。 GST薄膜在不同阶段的光学常数是通过分光光度法获得的，方法是将它们的透射率数据与Tauc-Lorentz（TL）色散模型拟合。折射率和消光系数在退火和激光辐照后，特别是在1550 nm处，折射率从3.85（非晶态）到6.5（晶体）表现出显着变化。光学常数已被证明能够通过激光辐照方法进行微调。因此，由于快速和可重复的相变，光学性能的显着可调性使GST适用于可调光子器件。

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