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首页> 外文期刊>RSC Advances >Large positive magnetoresistance in semiconducting single-walled carbon nanotubes at room temperature
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Large positive magnetoresistance in semiconducting single-walled carbon nanotubes at room temperature

机译：室温下半导体单壁碳纳米管的大正磁电阻

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摘要

We have investigated the effect of a magnetic field on the resistance (magnetoresistance, MR) of single-walled carbon nanotube (SWNT) arrays. The SWNT devices consist of a mixture of metallic and semiconducting SWNTs between palladium electrodes. The MR of the devices is studied at room temperature and in the presence of perpendicular magnetic fields up to 0.24 tesla. The resistance increases as the external magnetic field becomes higher, suggesting a positive MR of SWNTs. After etching the metallic SWNTs by electrical breakdown, the MR can be further enhanced. Large positive MR values about 15%, 20% and 25% were found in three different devices at 0.24 tesla for semiconducting SWNTs at room temperature. Our results show potential for the development of magneto-electronic devices that are operable at room temperature.
机译：我们已经研究了磁场对单壁碳纳米管（SWNT）阵列的电阻（磁阻，MR）的影响。 SWNT器件由钯电极之间的金属和半导体SWNT的混合物组成。在室温和存在高达0.24特斯拉的垂直磁场的情况下研究了器件的MR。电阻随着外部磁场的升高而增加，表明SWNT的MR为正。在通过电击穿蚀刻金属SWNT之后，可以进一步增强MR。对于室温下的半导体SWNT，在0.24特斯拉的三种不同器件中发现了约15％，20％和25％的大正MR值。我们的结果显示了开发可在室温下工作的磁电子设备的潜力。

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