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首页> 外文期刊>RSC Advances >Microwave assisted robust aqueous synthesis of Mn2+-doped CdSe QDs with enhanced electronic properties
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Microwave assisted robust aqueous synthesis of Mn2+-doped CdSe QDs with enhanced electronic properties

机译：微波辅助鲁棒水合成Mn2 +掺杂的CdSe量子点具有增强的电子性能

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A robust doping strategy of Mn ~(2+) ions in CdSe QDs has been developed in aqueous medium with mild microwave irradiation using the short-chain capping ligand 3-MPA. The concentration of the dopant is varied stoichiometrically in order to measure its effect on the conductivity of QD solids for further potential applications in the future. The synthesis parameters of CdSe QDs have been optimized to produce a uniform size among various samples to decouple the doping dependent conductivity from their bandgap. Doping yield is measured extensively by several studies like EDS, ICP-AES, and XPS. The layer-by-layer electrostatic assembly method has been exploited to fabricate thin film devices. I – V characteristics reveal that the electrical conductivity of 2% Mn ~(2+) -doped CdSe QD devices is enhanced on the order of ～10 ~(4) compared to its undoped counterpart. The “auto-ionization” of Mn ~(2+) dopants in CdSe QDs due to the quantum confinement effect is one reason for this jump in conductivity as described in the Poole–Frenkel effect. STM measurements of the monolayer QD device shows its resistive switching properties. Importantly, the threshold voltage of switching decreased with the increase of doping concentration. All these results confirm the efficiency of Mn ~(2+) doping in zinc-blende CdSe QDs in aqueous medium, by avoiding the “self-purification” effect of CdSe QDs, and their further application as a potential candidate for future memristor devices.
机译：使用短链封端配体3-MPA在温和的微波辐射下，在水介质中开发了CdSe QDs中Mn〜（2+）离子的稳健掺杂策略。掺杂剂的浓度是化学计量变化的，以便测量其对QD固体电导率的影响，以供将来进一步应用。 CdSe QD的合成参数已经过优化，可以在各种样品之间产生均匀的尺寸，从而将掺杂依赖性电导率与其带隙解耦。掺杂率是通过EDS，ICP-AES和XPS等多项研究进行广泛测量的。已经采用了逐层静电组装方法来制造薄膜器件。 I – V特性表明，与未掺杂的Mn〜（2+）掺杂的CdSe QD器件相比，掺杂2％Mn〜（2+）的QD器件的电导率提高了约10〜（4）。如Poole-Frenkel效应中所述，由于量子限制效应，CdSe QD中Mn〜（2+）掺杂剂的“自电离”是电导率跃升的原因之一。单层QD器件的STM测量显示其电阻切换特性。重要的是，开关的阈值电压随着掺杂浓度的增加而降低。所有这些结果通过避免CdSe QD的“自纯化”效应以及将其进一步用作未来忆阻器器件的潜在候选者，证实了在水性介质中的掺锌CdSe QD中Mn〜（2+）掺杂的效率。

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