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Microwave assisted robust aqueous synthesis of Mn2+-doped CdSe QDs with enhanced electronic properties

机译：微波辅助稳健的含水合成Mn2 + - 掺杂Cdse QDS，具有增强的电子特性

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摘要

A robust doping strategy of Mn2+ ions in CdSe QDs has been developed in aqueous medium with mild microwave irradiation using the short-chain capping ligand 3-MPA. The concentration of the dopant is varied stoichiometrically in order to measure its effect on the conductivity of QD solids for further potential applications in the future. The synthesis parameters of CdSe QDs have been optimized to produce a uniform size among various samples to decouple the doping dependent conductivity from their bandgap. Doping yield is measured extensively by several studies like EDS, ICP-AES, and XPS. The layer-by-layer electrostatic assembly method has been exploited to fabricate thin film devices. I-V characteristics reveal that the electrical conductivity of 2% Mn2+-doped CdSe QD devices is enhanced on the order of similar to 10(4) compared to its undoped counterpart. The "auto-ionization" of Mn2+ dopants in CdSe QDs due to the quantum confinement effect is one reason for this jump in conductivity as described in the Poole-Frenkel effect. STM measurements of the monolayer QD device shows its resistive switching properties. Importantly, the threshold voltage of switching decreased with the increase of doping concentration. All these results confirm the efficiency of Mn2+ doping in zinc-blende CdSe QDs in aqueous medium, by avoiding the "self-purification" effect of CdSe QDs, and their further application as a potential candidate for future memristor devices.
机译：在水性介质中，使用短链覆盖配体3-MPa在水性介质中开发了CDSE QDS中的MN2 +离子的稳健掺杂策略。掺杂剂的浓度是化学的，以便在未来的进一步潜在应用中测量其对QD固体的电导率的影响。已经优化了CDSE QDS的合成参数，以在各种样品中产生均匀的尺寸，以将掺杂依赖性电导率从其带隙脱钩。掺杂产量由诸如EDS，ICP-AES和XPS等几项研究广泛测量。逐层静电组件方法已经利用以制造薄膜装置。 I-V特性表明，与其未掺杂的对应物相比，2％MN2 + -Doped Cdse QD器件的电导率提高了10（4）的顺序。由于量子限制效果，Cdse QDS中的Mn2 +掺杂剂的“自动电离”是如Poole-Frenkel效果所述的导电性跳跃的一个原因。单层QD装置的STM测量显示其电阻切换性能。重要的是，随着掺杂浓度的增加，切换的阈值电压降低。所有这些结果通过避免CDSE QD的“自净化”效应，确认在锌 - Blende Cdse QDS中的Mn2 +掺杂效率，以及它们作为未来忆阻器设备的潜在候选者的进一步应用。

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  • 来源
    《RSC Advances》 |2018年第47期|共11页
  • 作者

    Meladom Sandhya K.; Arackal Sarath; Sreedharan Anjusree; Sagar Srikrishna; Das Bikas C.;

  • 作者单位

    Indian Inst Sci Educ &

    Res Thiruvananthapuram IIS Sch Phys Thiruvananthapuram 695551 Kerala India;

    Indian Inst Sci Educ &

    Res Thiruvananthapuram IIS Sch Phys Thiruvananthapuram 695551 Kerala India;

    Indian Inst Sci Educ &

    Res Thiruvananthapuram IIS Sch Phys Thiruvananthapuram 695551 Kerala India;

    Indian Inst Sci Educ &

    Res Thiruvananthapuram IIS Sch Phys Thiruvananthapuram 695551 Kerala India;

    Indian Inst Sci Educ &

    Res Thiruvananthapuram IIS Sch Phys Thiruvananthapuram 695551 Kerala India;

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  • 正文语种 eng
  • 中图分类 化学;
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