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首页> 外文期刊>RSC Advances >Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates
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Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

机译：用于有机场效应晶体管和逻辑门的强脉冲紫外线转换全氢聚硅氮烷栅极电介质

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We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO _(2) film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters. The conversion process of PHPS to SiO _(2) was optimized by varying the number of intense pulses and applied voltage. The chemical structure and gate dielectric properties of the PHPS-derived SiO _(2) films were systematically investigated via Fourier transform infrared spectroscopy and leakage current measurements, respectively. The resulting PHPS-derived SiO _(2) gate dielectric layer showed a dielectric constant of 3.8 at 1 MHz and a leakage current density of 9.7 × 10 ~(?12) A cm ~(?2) at 4.0 MV cm ~(?1) . The PHPS-derived SiO _(2) film was utilized as a gate dielectric for fabricating benchmark p- and n-channel OFETs based on pentacene and N , N ′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C _(8) ), respectively. The resulting OFETs exhibited good electrical properties, such as carrier mobilities of 0.16 (±0.01) cm ~(2) V ~(?1) s ~(?1) (for the pentacene OFET) and 0.02 (±0.01) cm ~(2) V ~(?1) s ~(?1) (for the PTCDI-C _(8) OFET) and an on–off current ratio larger than 10 ~(5) . The fabrication of the PHPS-derived SiO _(2) gate dielectric layer by a simple solution process and intense pulsed UV irradiation at room temperature serves as a novel approach for the realization of large-area flexible electronics in the flexible device industry of the future.
机译：我们通过强烈的脉冲UV辐射制备了高质量的全氢聚硅氮烷（PHPS）衍生的SiO _（2）膜，并将其用作高性能有机场效应晶体管（OFET）和互补逆变器的栅极介电层。通过改变强脉冲的数量和施加的电压，优化了PHPS向SiO _（2）的转化过程。分别通过傅立叶变换红外光谱和泄漏电流测量系统研究了PHPS衍生的SiO _（2）薄膜的化学结构和栅极介电性能。所得的PHPS衍生的SiO _（2）栅介电层在1MHz下显示出3.8的介电常数，在4.0MVcm·（·下，漏电流密度为9.7×10·（·12）A·cm·（·2）。 1）。将PHPS衍生的SiO _（2）膜用作栅极电介质，以基于并五苯和N，N'-二辛基-3,4,9,10-per基二苯甲酰亚胺（PTCDI-C）制作基准p和n沟道OFET _（8））。所得的OFET表现出良好的电性能，例如载流子迁移率为0.16（±0.01）cm〜（2）V〜（？1）s〜（？1）（对于并五苯OFET）和0.02（±0.01）cm〜（ 2）V〜（？1）s〜（？1）（对于PTCDI-C _（8）OFET），并且开关电流比大于10〜（5）。通过简单的固溶过程和强脉冲紫外线在室温下制备PHPS衍生的SiO _（2）栅介电层，成为实现未来柔性器件行业中大面积柔性电子产品的一种新颖方法。 。

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