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首页> 外文期刊>RSC Advances >Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates
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Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

机译：用于有机场效应晶体管和逻辑门的强烈脉冲 - 紫外转换的水氢化酶栅极电介质

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摘要

We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters. The conversion process of PHPS to SiO2 was optimized by varying the number of intense pulses and applied voltage. The chemical structure and gate dielectric properties of the PHPS-derived SiO2 films were systematically investigated via Fourier transform infrared spectroscopy and leakage current measurements, respectively. The resulting PHPS-derived SiO2 gate dielectric layer showed a dielectric constant of 3.8 at 1 MHz and a leakage current density of 9.7 x 10(-12) A cm(-2) at 4.0 MV cm(-1). The PHPS-derived SiO2 film was utilized as a gate dielectric for fabricating benchmark p-and n-channel OFETs based on pentacene and N,N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C-8), respectively. The resulting OFETs exhibited good electrical properties, such as carrier mobilities of 0.16 (+/- 0.01) cm(2) V-1 s(-1) (for the pentacene OFET) and 0.02 (+/- 0.01) cm(2) V-1 s(-1) (for the PTCDI-C-8 OFET) and an on-off current ratio larger than 10(5). The fabrication of the PHPS-derived SiO2 gate dielectric layer by a simple solution process and intense pulsed UV irradiation at room temperature serves as a novel approach for the realization of large-area flexible electronics in the flexible device industry of the future.
机译：我们通过强烈的脉冲UV照射制造了一种高质量的植物水解硅烷（PHPS）的SiO2膜，并将其作为高性能有机场效应晶体管（OFET）和互补逆变器的栅极介电层。通过改变强脉冲和施加电压的数量来优化PHPS至SiO2的转化过程。通过傅里叶变换红外光谱和漏电流测量系统地研究了PHPS衍生的SiO2膜的化学结构和栅极电介质性质。所得到的PHPS衍生的SiO2栅极介电层显示为1MHz的3.8的介电常数，漏电流密度为9.7×10（-12）厘米（-2），在4.0mVcm（-1）。将PHPS衍生的SiO 2膜用作基于五烯烯和N，N'-二辛基-3,4,9,10-PTCDI-C-8）的基于五苯和N，N'-二辛基-3,4,9,10-PTCDI-C-8）的基准介电作为栅极电介质。分别。所得到的电容表现出良好的电性能，例如0.16（+/- 0.01）cm（2）V-1 s（-1）（对于五等）的载体迁移率和0.02（+/- 0.01）cm（2） V-1S（-1）（对于PTCDI-C-8 OFET）和开关电流比大于10（5）。在室温下通过简单的溶液工艺和强烈的脉冲UV照射制造PHPS衍生的SiO2栅极介电层用作实现未来柔性装置行业中大面积柔性电子设备的新方法。

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  • 来源
    《RSC Advances》 |2019年第6期|共7页
  • 作者

    Back Han Sol; Kim Min Je; Baek Jeong Ju; Kim Do Hwan; Shin Gyojic; Choi Kyung Ho; Cho Jeong Ho;

  • 作者单位

    Korea Inst Ind Technol Res Inst Sustainable Mfg Syst Intelligent Sustainable Mat R&

    D Grp Cheonan Si 331822 Chungcheongnam South Korea;

    SKKU Adv Inst Nanotechnol SAINT Suwon 440746 South Korea;

    Korea Inst Ind Technol Res Inst Sustainable Mfg Syst Intelligent Sustainable Mat R&

    D Grp Cheonan Si 331822 Chungcheongnam South Korea;

    Hanyang Univ Dept Chem Engn Seoul 04763 South Korea;

    Korea Inst Ind Technol Res Inst Sustainable Mfg Syst Intelligent Sustainable Mat R&

    D Grp Cheonan Si 331822 Chungcheongnam South Korea;

    Korea Inst Ind Technol Res Inst Sustainable Mfg Syst Intelligent Sustainable Mat R&

    D Grp Cheonan Si 331822 Chungcheongnam South Korea;

    Yonsei Univ Dept Chem &

    Biomol Engn Seoul 03722 South Korea;

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