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首页> 外文期刊>RSC Advances >Fabrication of ultra-smooth and oxide-free molecule-ferromagnetic metal interfaces for applications in molecular electronics under ordinary laboratory conditions
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Fabrication of ultra-smooth and oxide-free molecule-ferromagnetic metal interfaces for applications in molecular electronics under ordinary laboratory conditions

机译：超光滑和无氧化物的分子-铁磁性金属界面的制造，用于普通实验室条件下的分子电子学

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Self-assembled monolayers of alkanethiolates on ferromagnetic metal surfaces have potential applications in molecular spintronics, but the fabrication of such structures is complicated by unwanted oxidation of the ferromagnetic metal. This paper describes the fabrication of ultra-smooth oxide-free Ni surfaces via template-stripping which are protected by SAMs of S(CH2)n?1CH3 that are stable for 1 day in ambient environment. Our method does not require ultra-high vacuum conditions, glove-box techniques, or (redox) cleaning of the Ni surface, but can be readily applied under ordinary laboratory conditions. Passivation of the Si/SiO2 template with a layer of FOTS (1H,1H,2H,2H-perfluorooctyltrichlorosilane) reduced the Ni-template interaction sufficiently enabling successful template-stripping. The NiTS–SAM interfaces were characterized by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). We found that the surfaces were ultra-flat with a root mean square surface roughness of 0.15 ± 0.05 nm over 1.0 × 1.0 μm2 and that they were stable against oxidation for 1 day in air at room temperature. These SAMs on Ni were incorporated in SAM-based tunneling junctions of the form NiTS–SCn//GaOx/EGaIn to study the tunneling rate across the SAMs. The tunneling rate is highly sensitive to defects in the SAMs or the presences of oxides. We found that the charge transport properties across these junctions were indistinguishable from those junctions with formed on AuTS and AgTS substrates from which we conclude that our method yields high quality NiTS–SAM interfaces suitable for applications in molecular electronics.
机译：铁磁金属表面上链烷硫醇盐的自组装单分子层在分子自旋电子学中具有潜在的应用，但是由于铁磁金属的有害氧化，使这种结构的制造变得复杂。本文描述了通过模板剥离法制备超光滑的无氧化镍表面的方法，该表面受S（CH 2 ）的SAM保护 n ？1 CH 3 在环境中稳定1天。我们的方法不需要超高真空条件，手套箱技术或镍表面的（氧化还原）清洁，但可以在普通实验室条件下轻松应用。 Si / SiO 2 模板用FOTS（1 H ，1 H ，2 < em> H ，2 H -全氟辛基三氯硅烷）可以充分减少Ni-模板的相互作用，从而成功实现模板剥离。 Ni TS -SAM界面通过X射线光电子能谱（XPS）和原子力显微镜（AFM）表征。我们发现表面超平整，在1.0×1.0μm 2 上的均方根表面粗糙度为0.15±0.05 nm，并且对于1次氧化稳定。在室温下空气中的一天。这些关于Ni的SAM以Ni TS –SC n // GaO x / EGaIn研究跨SAM的隧穿速率。隧穿速率对SAM中的缺陷或氧化物的存在高度敏感。我们发现在这些结处的电荷输运特性与在Au TS 和Ag TS 我们得出的结论是，我们的方法可产生适用于分子电子学的高质量Ni TS -SAM接口。

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