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首页> 外文期刊>RSC Advances >Fabrication of ultra-smooth and oxide-free molecule-ferromagnetic metal interfaces for applications in molecular electronics under ordinary laboratory conditions
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Fabrication of ultra-smooth and oxide-free molecule-ferromagnetic metal interfaces for applications in molecular electronics under ordinary laboratory conditions

机译：在普通实验室条件下，在分子电子中制造超光滑和氧化物分子 - 铁磁金属界面

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Self-assembled monolayers of alkanethiolates on ferromagnetic metal surfaces have potential applications in molecular spintronics, but the fabrication of such structures is complicated by unwanted oxidation of the ferromagnetic metal. This paper describes the fabrication of ultra-smooth oxide-free Ni surfaces via template-stripping which are protected by SAMs of S(CH2)(n-1)CH3 that are stable for 1 day in ambient environment. Our method does not require ultra-high vacuum conditions, glove-box techniques, or (redox) cleaning of the Ni surface, but can be readily applied under ordinary laboratory conditions. Passivation of the Si/SiO2 template with a layer of FOTS (1H,1H,2H,2H-perfluorooctyltrichlorosilane) reduced the Ni-template interaction sufficiently enabling successful template-stripping. The Ni-TS-SAM interfaces were characterized by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). We found that the surfaces were ultra-flat with a root mean square surface roughness of 0.15 +/- 0.05 nm over 1.0 x 1.0 mu m(2) and that they were stable against oxidation for 1 day in air at room temperature. These SAMs on Ni were incorporated in SAM-based tunneling junctions of the form Ni-TS-SCn//GaOx/EGaIn to study the tunneling rate across the SAMs. The tunneling rate is highly sensitive to defects in the SAMs or the presences of oxides. We found that the charge transport properties across these junctions were indistinguishable from those junctions with formed on Au-TS and Ag-TS substrates from which we conclude that our method yields high quality Ni-TS-SAM interfaces suitable for applications in molecular electronics.
机译：铁磁性金属表面上的烷基硫醇酸酯的自组装单层具有分子闪铜的潜在应用，但是这种结构的制造通过不希望的铁磁金属氧化而复杂。本文描述了通过模板汽提的超光滑氧化物Ni表面的制造，所述模板汽提由S（CH2）（N-1）CH3的SAM保护，其在环境环境中稳定为1天。我们的方法不需要超高真空条件，手套箱技术或（氧化还原）清洗Ni表面，但可以在普通实验室条件下容易地应用。将Si / SiO2模板用一层（1H，1H，2H，2H-全氟辛硅烷硅烷）钝化降低了足以实现成功模板汽提的Ni-Template相互作用。 Ni-TS-SAM界面的特征在于X射线光电子能谱（XPS）和原子力显微镜（AFM）。我们发现表面的超扁平，具有0.15±0.05nm的根均方表面粗糙度超过1.0×1.0μm（2），并且在室温下在空气中稳定稳定。 Ni上的这些SAM在基于SAM的Ni-TS-SCN // Gaox / Egain的基于SAM的隧道连接中，以研究SAM的隧道速率。隧道速率对SAMS中的缺陷或氧化物的缺陷非常敏感。我们发现这些交界处的电荷传输性能与在AU-TS和AG-TS底物上形成的那些连接点中难以区分，我们得出的结论是，我们的方法能够产生适合于分子电子产品中应用的高质量Ni-TS-SAM界面。

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  • 来源
    《RSC Advances》 |2017年第24期|共8页
  • 作者

    Kumar Karuppannan Senthil; Jiang Li; Nijhuis Christian A.;

  • 作者单位

    Natl Univ Singapore Dept Chem 3 Sci Dr 3 Singapore 117543 Singapore;

    Natl Univ Singapore Dept Chem 3 Sci Dr 3 Singapore 117543 Singapore;

    Natl Univ Singapore Dept Chem 3 Sci Dr 3 Singapore 117543 Singapore;

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  • 正文语种 eng
  • 中图分类 化学;
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