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首页> 外文期刊>RSC Advances >Realization of uniaxially strained, rolled-up monolayer CVD graphene on a Si platform via heteroepitaxial InGaAs/GaAs bilayers
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Realization of uniaxially strained, rolled-up monolayer CVD graphene on a Si platform via heteroepitaxial InGaAs/GaAs bilayers

机译：通过异质外延InGaAs / GaAs双层 在Si平台上实现单轴应变，卷起的单层CVD石墨烯

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摘要

III–V semiconductor/graphene tubular structures with diameters of 4.5–5.4 μm have been fabricated on a silicon platform by rolling up monolayer CVD graphene together with heteroepitaxial InGaAs/GaAs bilayers. Scanning electron microscopy (SEM) reveals that transferred graphene adheres to the wall of the Si-based InGaAs/GaAs microtube. Micro-Raman spectroscopy measurements show remarkable redshifts of the G and 2D bands of graphene after planar graphene totally rolls up, reflecting that rolled-up graphene is under uniaxial tensile strain and the strain originates from the rolled-up InGaAs/GaAs microtube. We also fabricated GaAs-based III–V semiconductor/graphene tubular structures with diameters of 3.7 and 4.7 μm, respectively, thus finding an approach to graphene strain engineering (i.e., the Raman redshift and tensile strain of rolled-up graphene increase with the decrement of microtube diameter). Obviously, assembling strained graphene with III–V semiconductors in rolled-up form on a Si platform will bring about a variety of Si-based electronic and optical applications in the future.
机译：通过将单层CVD石墨烯与异质外延InGaAs / GaAs双层一起卷起，可以在硅平台上制造直径为4.5-5.4μm的III-V半导体/石墨烯管状结构。扫描电子显微镜（SEM）显示，转移的石墨烯粘附在Si基InGaAs / GaAs微管壁上。显微拉曼光谱测量显示，在平面石墨烯完全卷起后，石墨烯的G带和2D谱带出现明显的红移，这表明卷起的石墨烯处于单轴拉伸应变下，并且应变源自卷起的InGaAs / GaAs微管。我们还制造了直径分别为3.7和4.7μm的基于GaAs的III–V半导体/石墨烯管状结构，从而找到了石墨烯应变工程方法（ ie ，拉曼红移和轧制拉伸应变）。石墨烯随微管直径的减小而增加）。显然，在Si平台上将应变石墨烯与III-V半导体以卷起形式组装在一起，将在未来带来各种基于Si的电子和光学应用。

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