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首页> 外文期刊>RSC Advances >Realization of uniaxially strained, rolled-up monolayer CVD graphene on a Si platform via heteroepitaxial InGaAs/GaAs bilayers
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Realization of uniaxially strained, rolled-up monolayer CVD graphene on a Si platform via heteroepitaxial InGaAs/GaAs bilayers

机译：通过异腔IngaAs / GaAs双层的Si平台上的单轴紧张，卷起单层CVD石墨烯的实现

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摘要

III-V semiconductor/graphene tubular structures with diameters of 4.5-5.4 mu m have been fabricated on a silicon platform by rolling up monolayer CVD graphene together with heteroepitaxial InGaAs/GaAs bilayers. Scanning electron microscopy (SEM) reveals that transferred graphene adheres to the wall of the Si-based InGaAs/GaAs microtube. Micro-Raman spectroscopy measurements show remarkable redshifts of the G and 2D bands of graphene after planar graphene totally rolls up, reflecting that rolled-up graphene is under uniaxial tensile strain and the strain originates from the rolled-up InGaAs/GaAs microtube. We also fabricated GaAs-based III-V semiconductor/graphene tubular structures with diameters of 3.7 and 4.7 mu m, respectively, thus finding an approach to graphene strain engineering (i.e., the Raman redshift and tensile strain of rolled-up graphene increase with the decrement of microtube diameter). Obviously, assembling strained graphene with III-V semiconductors in rolled-up form on a Si platform will bring about a variety of Si-based electronic and optical applications in the future.
机译：III-V半导体/石墨烯管状管状结构在硅平台上通过与异质轴IngaAs / GaAs双层轧制在一起，在硅平台上制造了4.5-5.4μm。扫描电子显微镜（SEM）显示转移的石墨烯粘附到基于Si的InGaAs / GaAs MicroTube的壁上。微拉曼光谱测量显示平面石墨烯完全卷起后石墨烯的G和2D带的显着红移，反射卷起的石墨烯在单轴拉伸应变下，菌株源自卷起的InGaAs / GaAs Microtube。我们还在具有3.7和4.7μm的直径的基于GaAs的III-V半导体/石墨烯管状结构，从而找到了石墨烯应变工程的方法（即，拉曼射频和卷起石墨烯的拉伸应变增加减少微管直径）。显然，在SI平台上将带有III-V半导体的卷曲石墨烯与III-V半导体组装，将来将带来各种基于SI的电子和光学应用。

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  • 来源
    《RSC Advances》 |2017年第24期|共6页
  • 作者

    Mao Guoming; Wang Qi; Chai Zhaoer; Liu Hao; Liu Kai; Ren Xiaomin;

  • 作者单位

    Beijing Univ Posts &

    Telecommun State Key Lab Informat Photon &

    Opt Commun Beijing 100876 Peoples R China;

    Beijing Univ Posts &

    Telecommun State Key Lab Informat Photon &

    Opt Commun Beijing 100876 Peoples R China;

    Beijing Univ Posts &

    Telecommun State Key Lab Informat Photon &

    Opt Commun Beijing 100876 Peoples R China;

    Beijing Univ Posts &

    Telecommun State Key Lab Informat Photon &

    Opt Commun Beijing 100876 Peoples R China;

    Beijing Univ Posts &

    Telecommun State Key Lab Informat Photon &

    Opt Commun Beijing 100876 Peoples R China;

    Beijing Univ Posts &

    Telecommun State Key Lab Informat Photon &

    Opt Commun Beijing 100876 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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