Correction: EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer

Cleverson Alves da Silva Moura; Guilherme Kretzmann Belmonte; Pulikanti Guruprasad Reddy; Kenneth E. Gonsalves; Daniel Eduardo Weibel

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Correction: EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer

机译：更正：含有锑作为吸收促进剂的杂化非化学放大抗蚀剂的EUV光碎裂研究

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Correction for ‘EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer’ by Cleverson Alves da Silva Moura et al. , RSC Adv. , 2018, 8 , 10930–10938.

机译：Cleverson Alves da Silva Moura等人对“含锑作为吸收增强剂的非化学放大混合抗蚀剂的EUV光致碎裂研究”的更正。，RSC Adv。，2018，8，10930-10938。

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《RSC Advances》 |2018年第27期|共1页
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Cleverson Alves da Silva Moura; Guilherme Kretzmann Belmonte; Pulikanti Guruprasad Reddy; Kenneth E. Gonsalves; Daniel Eduardo Weibel;
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1. Correction: EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer [J] . Cleverson Alves da Silva Moura, Guilherme Kretzmann Belmonte, Pulikanti Guruprasad Reddy, RSC Advances . 2018,第27期

机译：更正：含有锑作为吸收促进剂的杂化非化学放大抗蚀剂的EUV光碎裂研究
2. EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer (vol 8, pg 10930, 2018) [J] . da Silva Moura Cleverson Alves, Belmonte Guilherme Kretzmann, Reddy Pulikanti Guruprasad, RSC Advances . 2018,第27期

机译：杂交非化学放大抗性含有锑作为吸收增强剂的EUV照相研究（Vol 8，PG 10930,2018）
3. EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer [J] . da Silva Moura Cleverson Alves, Belmonte Guilherme Kretzmann, Reddy Pulikanti Guruprasad, RSC Advances . 2018,第20期

机译：杂交非化学扩增抗蚀剂含有锑作为吸收增强剂的EUV照相研究
4. High sensitivity chemically amplified EUV resists through enhanced EUV absorption [C] . Owendi Ongayi, Suzanne Coley, David Valeri, Conference on extreme ultraviolet (EUV) lithography III . 2012

机译：高灵敏度化学放大的EUV可通过增强的EUV吸收来抵抗
5. Surface chemistry study of gallium arsenide wafers during chemically amplified resist patterning and resist studies with fluorescence. [D] . Lu, Bing. 2000

机译：砷化镓晶片的表面化学研究在化学放大的抗蚀剂构图过程中进行，并通过荧光进行抗蚀剂研究。
6. Fabricating a high-resolution mask with improved line-edge roughness by using a nonchemically amplified resist and a postexposure bake [O] . Hidetatsu Miyoshi, Jun Taniguchi -1

机译：通过使用非化学放大的抗蚀剂和曝光后烘烤来制造具有改善的线边缘粗糙度的高分辨率掩模
7. EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer [O] . Cleverson Alves da Silva Moura, Guilherme Kretzmann Belmonte, Pulikanti Guruprasad Reddy, 2018

机译：杂交非化学扩增抗蚀剂含有锑作为吸收增强剂的EUV照相研究

Correction: EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer

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