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首页> 外文期刊>RSC Advances >An approach for correlating the structural and electrical properties of Zr4+-modified SrBi4Ti4O15/SBT ceramic
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An approach for correlating the structural and electrical properties of Zr4+-modified SrBi4Ti4O15/SBT ceramic

机译：Zr 4 + 修饰的SrBi 4 Ti 4 O 15 /的结构和电学性质相关的方法SBT陶瓷

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In the present work, B-site modified layer-structured strontium bismuth titanate (SBT) ceramics with the nominal formula SrBi4Ti4?xZrxO15 were prepared by solid state reaction route and the tailoring effects of zirconium (Zr) were investigated thoroughly. The X-ray diffraction analysis shows that the substitution leads to the formation of a single phase layered perovskite up to x ≤ 0.15 and a ZrO2-based secondary phase was detected for higher Zr-doped compositions. The higher grain-growth rate induced by the larger ionic radius of Zr4+ than Ti4+ was supported by the field emission scanning electron microscopy (FESEM) results. The transition temperature increases slightly for the Zr-modified compositions, which can be described in terms of structural distortion due to the internal stresses developed within the ceramics. The Cole–Cole plot analysis of impedance spectra enabled to distinguish two relaxation behaviours that were assigned to originate from grains and grain boundaries. It was also observed that the remnant polarization and piezoelectric coefficient increases up to the solubility limit of Zr and then decreases with higher doping content. The temperature dependent piezoelectric coefficient was also studied, and was found to be stable up to the transition temperature in all compositions. All these results were explained on the basis of occupancy of the Zr4+ ion at the B-site and for the higher composition ZrO2 secondary phase. Even the composition x = 0.15 exhibited low conductivity, a moderate dielectric constant and a highly stable d33 value, demonstrating that the ceramic is an excellent material for high-temperature piezoelectric application. The possible reason for the enhancement of the electrical properties in the Zr-modified ceramic was discussed based on the structural analysis, which may be used for designing and/or modifying properties of SBT-related ceramics.
机译：在目前的工作中，标称分子式为SrBi 4 Ti 4？ x Zr x O 15 <通过固态反应路线制备/ small，并彻底研究了锆（Zr）的定制作用。 X射线衍射分析表明，取代导致形成 x ≤0.15的单相钙钛矿和ZrO 2 的单相层状钙钛矿的形成。对于较高的Zr掺杂成分，可以检测到基于铁的第二相。 Zr 4 + 的离子半径大于Ti 4 + 的离子半径导致更高的晶粒生长速率得到支持通过场发射扫描电子显微镜（FESEM）的结果。 Zr改性组合物的转变温度略有升高，这可以用由于陶瓷内部产生的内应力引起的结构变形来描述。阻抗谱的Cole-Cole曲线分析可以区分两种松弛行为，这些松弛行为被指定源自晶粒和晶粒边界。还观察到，残余极化和压电系数增加到Zr的溶解度极限，然后随着较高的掺杂含量而降低。还研究了与温度有关的压电系数，发现在所有组合物中其在转变温度下均稳定。所有这些结果都是基于Zr 4 + 离子在B位置的占有率以及较高的ZrO 2 离子的占有率来解释的。 sub> 第二阶段。即使组成 x = 0.15也表现出低电导率，适中的介电常数和高度稳定的 d 33 值，证明陶瓷是用于高温压电应用的极佳材料。基于结构分析讨论了Zr改性陶瓷电性能增强的可能原因，该结构分析可用于设计和/或改性SBT相关陶瓷的性能。

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