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首页> 美国政府科技报告 >Studies of hydrogen-induced degradation processes in Pb(Zr (sub 1-x)Ti(sub x))O(sub 3) (PZT) and SrBi(sub 2)Ta(sub 2)O(sub 9) SBT ferroelectric film-based capacitors
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Studies of hydrogen-induced degradation processes in Pb(Zr (sub 1-x)Ti(sub x))O(sub 3) (PZT) and SrBi(sub 2)Ta(sub 2)O(sub 9) SBT ferroelectric film-based capacitors

机译：pb（Zr（sub 1-x）Ti（sub x））O（sub 3）（pZT）和srBi（sub 2）Ta（sub 2）O（sub 9）sBT铁电薄膜中氢诱导降解过程的研究基于电容器

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The integration of PZT and SBT film-based capacitors with Si integrated circuit technology requires the use of processing steps that may degrade the performance of individual device components. Hydrogen annealing to remove damage in the Si FET adversely affects both PZT and SBT, although the mechanisms of degradation are different. The authors have used Mass spectroscopy of recoiled ions (MSRI), X-ray diffraction (XRD), Raman spectroscopy and electrical characterization to study the mechanisms of hydrogen-induced degradation in these two materials. The mechanism responsible for degradation in SBT during hydrogen annealing appears to be hydrogen-induced volatilization of Bi from the near-surface region during film growth.

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