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Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric

机译:通过使用大介电常数栅极电介质接近薄膜晶体管的亚阈值摆动极限

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Low-temperature giant-dielectric-constant thin films (In _(0.0025) Nb _(0.0025) Ti _(0.995) O _(2) ) fabricated with simple radio frequency (RF) sputtering on glass substrates are employed as the gate dielectrics for thin-film transistors (TFTs) for the first time. The 380 nm-thick In _(0.0025) Nb _(0.0025) Ti _(0.995) O _(2) film exhibited a quasi-static capacitance of as high as 36?156 nF cm ~(?2) with a quasi-static permittivity of 15?525 (and 7607 nF cm ~(?2) at 1 kHz). Indium zinc oxide (IZO) TFTs with In _(0.0025) Nb _(0.0025) Ti _(0.995) O _(2) gate dielectrics exhibited high output current at low operation voltage and little hysteresis in the transfer curves between forward and reverse sweeps. The subthreshold swing (SS) of the IZO TFTs is 0.068 V dec ~(?1) , very close to the lowest limit of the SS of the field-effect transistors (0.06 V dec ~(?1) ). The results also proves that the lowest limit of the SS (0.06 V dec ~(?1) ) cannot be broken no matter how high the gate dielectric capacitance is (except for negative capacitors). The TFTs demonstrate the potential for the applications in low-power circuits or flat-panel displays.
机译:在玻璃基板上通过简单的射频(RF)溅射制成的低温巨介电常数薄膜(In_(0.0025)Nb _(0.0025)Ti _(0.995)O _(2))用作栅极电介质首次用于薄膜晶体管(TFT)。 380 nm厚的In _(0.0025)Nb _(0.0025)Ti _(0.995)O _(2)膜显示的准静态电容高达36?156 nF cm〜(?2),准静介电常数为15?525(在1 kHz时为7607 nF cm〜(?2))。具有In _(0.0025)Nb _(0.0025)Ti _(0.995)O _(2)的铟锌氧化物(IZO)TFT在低工作电压下表现出高输出电流,并且在正向和反向扫描之间的传输曲线中几乎没有磁滞现象。 IZO TFT的亚阈值摆幅(SS)为0.068V dec〜(Δ1),非常接近场效应晶体管的SS的最低极限(0.06V dec〜(Δ1))。结果还证明,无论栅极介电电容有多高(负电容器除外),都不能破坏SS的最低极限(0.06 V dec〜(?1))。 TFT展示了在低功率电路或平板显示器中应用的潜力。

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