Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric

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Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric

机译：通过使用巨型介电恒栅电介质接近薄膜晶体管的亚阈值限制

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Low-temperature giant-dielectric-constant thin films (In0.0025Nb0.0025Ti0.995O2) fabricated with simple radio frequency (RF) sputtering on glass substrates are employed as the gate dielectrics for thin-film transistors (TFTs) for the first time. The 380 nm-thick In0.0025Nb0.0025Ti0.995O2 film exhibited a quasi-static capacitance of as high as 36 156 nF cm(-2) with a quasi-static permittivity of 15 525 (and 7607 nF cm(-2) at 1 kHz). Indium zinc oxide (IZO) TFTs with In0.0025Nb0.0025Ti0.995O2 gate dielectrics exhibited high output current at low operation voltage and little hysteresis in the transfer curves between forward and reverse sweeps. The subthreshold swing (SS) of the IZO TFTs is 0.068 V dec(-1), very close to the lowest limit of the SS of the field-effect transistors (0.06 V dec(-1)). The results also proves that the lowest limit of the SS (0.06 V dec(-1)) cannot be broken no matter how high the gate dielectric capacitance is (except for negative capacitors). The TFTs demonstrate the potential for the applications in low-power circuits or flat-panel displays.

机译：用简单的射频（RF）溅射在玻璃基板上制造的低温巨电介质 - 恒定薄膜（IN0.0025NB0.0025250.95O2）用作第一次作为薄膜晶体管（TFT）的栅极电介质。 380 nm厚的IN0.0025nb0.0025250.995O2薄膜表现出高达36 156 NF cm（-2）的准静态电容，其准静态介电常数为15 525（和7607 nf cm（-2）） 1 kHz）。氧化铟锌（IZO）TFT，具有IN0.0025NB0.0025TI0.995O2栅极电介质在低操作电压下表现出高输出电流，在向前和反向扫描之间的转印曲线中的滞后很小。 IZO TFT的亚阈值摆动（SS）为0.068 V DEC（-1），非常接近现场效应晶体管的SS的最低限度（0.06 V DEC（-1））。结果还证明，无论栅极介电电容有多高（负电容除外），SS的最低限度（0.06 V DED（-1））不能被打破。 TFT展示了低功耗电路或平板显示器中应用的潜力。

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《RSC Advances》 |2019年第46期|共8页
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1. Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric [J] . RSC Advances . 2019,第46期

机译：通过使用巨型介电恒栅电介质接近薄膜晶体管的亚阈值限制
2. Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric [J] . Zhuo Chen, Linfeng Lan, Junbiao Peng RSC Advances . 2019,第46期

机译：通过使用大介电常数栅极电介质接近薄膜晶体管的亚阈值摆动极限
3. Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric [J] . Zhuo Chen, Linfeng Lan, Junbiao Peng RSC Advances . 2019,第46期

机译：通过使用大介电常数栅极电介质接近薄膜晶体管的亚阈值摆动极限
4. Gate-Voltage-Stress-Induced Instability in C8-BTBT Thin-Film Transistors with Aluminium Oxide as Gate Dielectric [C] . Yan Yan, Zizhen Huang, Xiaotong Ma, IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits . 2019

机译：栅极 - 电压应力诱导的C 8 - 氧化铝作为栅极电介质的薄膜晶体管
5. Understanding the Enhanced Mobility of Solution-Processed Metal-Oxide Thin-Film Transistors Having High-k Gate Dielectrics. [D] . Zeumault, Andre. 2017

机译：了解具有高k栅极介电常数的固溶处理金属氧化物薄膜晶体管的迁移率。
6. Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric [O] . Seungbeom Choi, Seungho Song, Taegyu Kim, 2020

机译：使用溶液加工的聚合物栅极电介质自对准顶栅金属氧化物薄膜晶体管
7. Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO-=SUB=-2-=/SUB=-/La-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/HfO-=SUB=-2-=/SUB=- (HLH) Sandwich Gate Dielectrics [O] . L. Ramesh, S. Moparthi, P.K. Tiwari, 2020

机译：用HFO-= sub = -2 - = / sub = - / la-= sub = -2- =的双栅双极层（DG-DAL）薄膜晶体管（TFT）电性能的研究。 / sub = -o- = sub = -3 - = / sub = - / hfo-= sub = -2 - = / sub = - （HLH）三明治栅极电介质

Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric

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