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Molecular orientation and stability of poly(3-hexylthiophene) nanogratings affected by the fabricated solvent vapor

机译:制备的溶剂蒸气对聚(3-己基噻吩)纳米光栅的分子取向和稳定性的影响

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During the nanoimprinting lithography (NIL) process, the role of solvent vapor in fabricating the pattern structure and inducing the molecular alignment of nanoimprinted polymer film has been attracting significant attention. We demonstrate here that the molecular orientation and thermal stability of poly(3-hexylthiophene) (P3HT) nanograting film can be affected obviously by the fabricated solvent vapor. A solvent-vapor nanoimprinting lithography (SV-NIL) technique based on a polydimethylsiloxane (PDMS) template is employed to fabricate a P3HT nanograting structure film successfully and solvent vapor is offered by chlorobenzene, chloroform and carbon disulphide, respectively. The molecular orientation of the polymer film is carefully characterized by grazing incidence wide angle X-ray diffraction (GIWAXD) measurements to investigate the effect of various solvent vapors on the molecular orientation of the P3HT nanograting film. For the P3HT nanograting film fabricated by chloroform and chlorobenzene solvent, the edge-on molecular orientation of the typical form II crystallographic structure is induced. However, this indicates that there are both the face-on molecular orientations of the form II and form I crystallographic conformation present for the P3HT nanograting film fabricated by carbon disulphide solvent. Therefore, the fabricated solvent vapor plays a significant role in determining the formation of the molecular orientation of the polymer nanostructure. Then, the role of thermal annealing in the stability of the molecular orientation was investigated for the P3HT nanograting film after a fixed temperature. As for the annealed nanograting film fabricated by chlorobenzene and chloroform solvent vapor, a single edge-on molecular orientation mode of the form I crystallographic structure has been obtained. However, for the annealed nanograting film fabricated by the carbon disulphide solvent, the edge-on and face-on molecular orientations of the form I crystallographic structure are still retained. This indicates that the stability of the form II crystallographic conformation is mainly dependent on the thermal annealing process. Therefore, after the annealing process, the final determining of the molecular alignment and crystallographic conformation depends significantly on the orientation type of the nanograting film before the annealing history, and it can be further inferred that the molecular orientation of the annealed polymer film is still affected by the fabricated solvent vapor significantly. Thus this will provide new understanding and guidance for the research of the topographical structure and molecular alignment of conjugated polymers.
机译:在纳米压印光刻(NIL)过程中,溶剂蒸气在制造图案结构和诱导纳米压印聚合物膜的分子取向方面的作用已引起广泛关注。我们在这里证明,聚(3-己基噻吩)(P3HT)纳米光栅膜的分子取向和热稳定性会受到所制备的溶剂蒸气的明显影响。采用基于聚二甲基硅氧烷(PDMS)模板的溶剂蒸气纳米压印光刻技术(SV-NIL)成功制备了P3HT纳米光栅结构膜,溶剂蒸气分别由氯苯,氯仿和二硫化碳提供。通过掠射入射广角X射线衍射(GIWAXD)测量来仔细表征聚合物膜的分子取向,以研究各种溶剂蒸气对P3HT纳米光栅膜的分子取向的影响。对于由氯仿和氯苯溶剂制成的P3HT纳米光栅膜,诱导了典型的II型晶体结构的边沿分子取向。然而,这表明对于由二硫化碳溶剂制备的P3HT纳米光栅膜,存在着形式II和形式I的晶体学构象的面对分子取向。因此,制造的溶剂蒸气在确定聚合物纳米结构的分子取向的形成中起重要作用。然后,研究了固定温度后,P3HT纳米光栅膜的热退火在分子取向稳定性中的作用。对于由氯苯和氯仿溶剂蒸气制备的退火纳米光栅膜,已经获得了I型晶体结构的单边沿分子取向模式。然而,对于由二硫化碳溶剂制造的退火纳米光栅膜,仍保留了I型晶体结构的边缘分子取向和面对面分子取向。这表明II型晶体构象的稳定性主要取决于热退火过程。因此,在退火过程之后,分子取向和晶体构象的最终确定在很大程度上取决于退火历史之前纳米光栅膜的取向类型,并且可以进一步推断出退火的聚合物膜的分子取向仍然受到影响。被制造出来的溶剂蒸气明显。因此,这将为共轭聚合物的拓扑结构和分子排列研究提供新的认识和指导。

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