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首页> 外文期刊>RSC Advances >Impact of Cu doping on the structural, morphological and optical activity of V2O5 nanorods for photodiode fabrication and their characteristics
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Impact of Cu doping on the structural, morphological and optical activity of V2O5 nanorods for photodiode fabrication and their characteristics

机译：铜掺杂对V2O5纳米棒在光电二极管制造中的结构，形态和光学活性的影响及其特性

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In this paper, we report a wet chemical precipitation method used to synthesize pure and Cu-doped V _(2) O _(5) nanorods with different doping concentrations (Cu _( x ) V _(2) O _(5) where x = 3, 5 or 7 at%), followed by annealing at 600 °C and characterizations using several techniques. Indeed, a growth mechanism explaining the morphological evolution under the experimental conditions is also proposed. The XRD patterns revealed that all of the studied samples consist of a single V _(2) O _(5) phase and are well crystallized with a preferential orientation towards the (200) direction. The presence of intrinsic defects and internal stresses in the lattice structure of the Cu _( x ) V _(2) O _(5) samples has been substantiated by detailed analysis of the XRD. Apart from the doping level, there was an assessment of identical tiny peaks attributed to the formation of a secondary phase of CuO. SEM images confirmed the presence of agglomerated particles on the surface; the coverage increased with Cu doping level. XPS spectral analysis showed that Cu in the V ~(5+) matrix exists mainly in the Cu ~(2+) state on the surface. The appearance of satellite peaks in the Cu 2p spectra, however, provided definitive evidence for the presence of Cu ~(2+) ions in these studied samples as well. Doping-induced PL quenching was observed due to the absorption of energy from defect emission in the V ~(5+) lattice by Cu ~(2+) ions. We have proposed a cost-effective, less complicated but effective way of synthesizing pure and doped samples in colloidal form, deposited by the nebulizer spray technique on p-Si to establish junction diodes with enhanced optoelectronic properties.
机译：在本文中，我们报告了一种湿法化学沉淀法，该方法用于合成具有不同掺杂浓度（Cu _（x）V _（2）O _（5）的纯铜和掺杂Cu的V _（2）O _（5）纳米棒。 （其中x = 3、5或7 at％），然后在600°C退火并使用多种技术进行表征。实际上，还提出了解释实验条件下形态演变的生长机理。 X射线衍射图谱表明，所有研究的样品均由单个V _（2）O _（5）相组成，且结晶良好，并朝（200）方向优先取向。 X射线衍射的详细分析证实了Cu _（x）V _（2）O _（5）样品的晶格结构中固有缺陷和内应力的存在。除了掺杂水平以外，还评估了归因于CuO第二相形成的相同微小峰。 SEM图像证实了在表面上存在附聚颗粒。覆盖率随铜掺杂量的增加而增加。 XPS光谱分析表明，V〜（5+）基体中的Cu主要存在于表面的Cu〜（2+）状态。然而，Cu 2p光谱中卫星峰的出现也为这些研究样品中Cu〜（2+）离子的存在提供了明确的证据。观察到掺杂引起的PL猝灭是由于Cu〜（2+）离子吸收了V〜（5+）晶格中缺陷发射的能量。我们提出了一种经济有效，简单易行但有效的方法，该方法通过雾化器喷涂技术将胶体形式的纯净掺杂样品掺杂到p-Si上，从而建立具有增强光电性能的结型二极管。

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