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Impact of Cu doping on the structural, morphological and optical activity of V2O5 nanorods for photodiode fabrication and their characteristics

机译：Cu掺杂对光电二极管制造V2O5纳米棒结构，形态学和光学活性的影响及其特性

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摘要

In this paper, we report a wet chemical precipitation method used to synthesize pure and Cu-doped V2O5 nanorods with different doping concentrations (CuxV2O5 where x 1/4 3, 5 or 7 at%), followed by annealing at 600 C and characterizations using several techniques. Indeed, a growth mechanism explaining the morphological evolution under the experimental conditions is also proposed. The XRD patterns revealed that all of the studied samples consist of a single V2O5 phase and are well crystallized with a preferential orientation towards the (200) direction. The presence of intrinsic defects and internal stresses in the lattice structure of the CuxV2O5 samples has been substantiated by detailed analysis of the XRD. Apart from the doping level, there was an assessment of identical tiny peaks attributed to the formation of a secondary phase of CuO. SEM images confirmed the presence of agglomerated particles on the surface; the coverage increased with Cu doping level. XPS spectral analysis showed that Cu in the V5+ matrix exists mainly in the Cu2+ state on the surface. The appearance of satellite peaks in the Cu 2p spectra, however, provided definitive evidence for the presence of Cu2+ ions in these studied samples as well. Doping-induced PL quenching was observed due to the absorption of energy from defect emission in the V5+ lattice by Cu2+ ions. We have proposed a cost-effective, less complicated but effective way of synthesizing pure and doped samples in colloidal form, deposited by the nebulizer spray technique on p-Si to establish junction diodes with enhanced optoelectronic properties.
机译：在本文中，我们报告了一种湿化学沉淀方法，用于合成具有不同掺杂浓度的纯和Cu掺杂的V2O5纳米棒（Cuxv2O5，其中x 1/4 3,5或7at），然后用600℃和使用表征来进行退火几种技术。实际上，还提出了一种在实验条件下解释形态演化的生长机制。 XRD图案显示，所有研究的样品由单个V2O5相包括，并且在（200）方向上具有优先取向的优先取向。通过对XRD的详细分析，已经证实了Cuxv2O5样品的晶格结构中的内在缺陷和内应力。除了掺杂水平之外，还评估了归因于CuO二次相的形成。 SEM图像确认了表面上的凝聚颗粒;覆盖率随CU掺杂水平增加。 XPS光谱分析表明，V5 +矩阵中的Cu主要存在于表面上的Cu2 +状态。然而，Cu 2P光谱中的卫星峰的外观提供了这些研究中的Cu 2 +离子的确定证据。由于Cu 2 +离子从V5 +格子中的缺陷发射吸收能量，观察到掺杂诱导的PL淬火。我们提出了一种成本效益，更复杂但有效的方式，可以用P-Si上的喷雾器喷射技术合成胶体形式的纯净和掺杂样品，以建立具有增强的光电性能的结二极管。

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  • 来源
    《RSC Advances》 |2019年第29期|共13页
  • 作者

    Thangarasu R.; Babu B.; Kumar N. Senthil; Ho Mon-Shu; Balasundaram O. N.; Elangovan T.;

  • 作者单位

    PSG Coll Arts &

    Sci Dept Phys Coimbatore 641014 Tamil Nadu India;

    Natl Chung Hsing Univ Dept Phys Taichung 402 Taiwan;

    Kongunadu Arts &

    Sci Coll Nanotechnol Res Lab Dept Phys Coimbatore 641029 Tamil Nadu India;

    Natl Chung Hsing Univ Dept Phys Taichung 402 Taiwan;

    PSG Coll Arts &

    Sci Dept Phys Coimbatore 641014 Tamil Nadu India;

    Periyar Univ Dept Energy Studies Salem 636011 Tamil Nadu India;

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