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首页> 外文期刊>RSC Advances >Replacement of n-type layers with a non-toxic APTES interfacial layer to improve the performance of amorphous Si thin-film solar cells
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Replacement of n-type layers with a non-toxic APTES interfacial layer to improve the performance of amorphous Si thin-film solar cells

机译：用无毒的APTES界面层代替n型层，以提高非晶硅薄膜太阳能电池的性能

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Hydrogenated amorphous Si (a-Si:H) thin-film solar cells (TFSCs) generally contain p-type Si layers, which are fabricated using toxic gases. The substitution of these p-type layers with non-toxic materials while improving the device performance is a major challenge in the field of TFSCs. Herein, we report the fabrication of a-Si:H TFSCs with the n-type Si layer replaced with a self-assembled monolayer (3-aminopropyl) triethoxysilane (APTES). The X-ray photoelectron spectroscopy results showed that the amine groups from APTES attached with the hydroxyl groups (–OH) on the intrinsic Si (i-Si) surface to form a positive interfacial dipole towards i-Si. This interfacial dipole facilitated the decrease in electron extraction barrier by lowering the work function of the cathode. Consequently, the TFSC with APTES showed a higher fill factor (0.61) and power conversion efficiency (7.68%) than the reference device (without APTES). This performance enhancement of the TFSC with APTES can be attributed to its superior built-in potential and the reduction in the Schottky barrier of the cathode. In addition, the TFSCs with APTES showed lower leakage currents under dark conditions, and hence better charge separation and stability than the reference device. This indicates that APTES is a potential alternative to n-type Si layers, and hence can be used for the fabrication of non-toxic air-stable a-Si:H TFSCs with enhanced performance.
机译：氢化非晶硅（a-Si：H）薄膜太阳能电池（TFSC）通常包含p / n型Si层，这些层是使用有毒气体制造的。用无毒材料替代这些p / n型层，同时改善器件性能是TFSC领域的主要挑战。在此，我们报告了用自组装单层（3-氨基丙基）三乙氧基硅烷（APTES）代替n型硅层的a-Si：H TFSCs的制造。 X射线光电子能谱结果表明，APTES的胺基与本征Si（i-Si）表面上的羟基（-OH）相连，形成一个向i-Si的正界面偶极子。该界面偶极子通过降低阴极的功函数而促进了电子提取势垒的降低。因此，带有APTES的TFSC的填充系数（0.61）和功率转换效率（7.68％）比参考设备（不带APTES）更高。带有APTES的TFSC的这种性能增强可以归因于其卓越的内置电势和阴极肖特基势垒的降低。此外，带有APTES的TFSC在黑暗条件下显示出较低的泄漏电流，因此比参考器件具有更好的电荷分离和稳定性。这表明APTES是n型Si层的潜在替代品，因此可用于制造性能增强的无毒的空气稳定的a-Si：H TFSC。

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