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首页> 外文期刊>RSC Advances >Charge transfer-induced enhancement of a Raman signal in a hybrid Ag–GaN nanostructure
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Charge transfer-induced enhancement of a Raman signal in a hybrid Ag–GaN nanostructure

机译：电荷转移诱导的Ag-GaN杂化纳米结构中拉曼信号增强

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摘要

A hybrid system consisting of Ag nanoparticles dispersed onto a GaN nanowall network (GaN NWN) exhibited characteristic optical properties and electronic band structure. Surface-sensitive XPS studies of this high-surface-area system revealed the presence of a high surface charge carrier concentration due to dangling bonds, which resulted in a high metal-like surface conductivity. The low coverage of absorbed Ag led to the nanocluster formation, facilitating charge transfer from GaN to Ag, and thereby further increasing the surface charge carriers. Photoluminescence studies revealed the presence of a high density of band tail states at the conduction band, which is significantly (14-fold) larger than in the GaN epilayer. Raman studies show an increase (2.46-fold) in the interfacial strain at the Ag/GaN interface after the deposition of the Ag nanoparticles. We show that these surface modifications increase the density of hot spots, resulting in an intense Raman signal with an enhancement factor of 10 ~(7) . The role of the charge transfer between Ag nanoparticles and GaN NWN in the enhancement of Raman signal has been demonstrated.
机译：由分散在GaN纳米壁网络（GaN NWN）上的Ag纳米粒子组成的混合系统表现出特征的光学性质和电子能带结构。对这种高表面积系统的表面敏感XPS研究表明，由于悬空键的存在，存在高的表面电荷载流子浓度，这导致了类似金属的高表面电导率。被吸收的银的低覆盖率导致形成纳米团簇，促进了电荷从GaN转移到银，从而进一步增加了表面电荷载流子。光致发光研究表明，在导带处存在高密度的带尾态，这比GaN外延层大得多（14倍）。拉曼研究表明，在沉积Ag纳米粒子之后，Ag / GaN界面处的界面应变增加（2.46倍）。我们表明，这些表面修饰增加了热点的密度，从而导致了强度为10〜（7）的强烈拉曼信号。已经证明了银纳米颗粒和GaN NWN之间的电荷转移在增强拉曼信号中的作用。

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