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首页> 外文期刊>Bulletin of the American Physical Society >APS -APS March Meeting 2017 - Event - Delocalized metallic state on insulating, disordered BiSbTeSe2 thin films -- a test of Z$_{mathrm{2}}$ protection.
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APS -APS March Meeting 2017 - Event - Delocalized metallic state on insulating, disordered BiSbTeSe2 thin films -- a test of Z$_{mathrm{2}}$ protection.

机译：APS -APS 2017年3月会议-事件-绝缘的，无序的BiSbTeSe2薄膜上的金属态离域-测试Z $ _ {mathrm {2}} $保护。

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We present thickness and temperature dependent magneto transport properties of bulk insulating and granular BiSbTeSe2 thin films, grown by pulsed laser deposition technique. The temperature dependent resistivity (R-T) of these films is found to be insulating (d$ho $/dT extless 0) and resistivity changes thrice the magnitude measured at room temperature as temperature is varied from 300K to 1.8K. On application of small perpendicular magnetic field in the low temperature regime, the R-T takes an upward shift from the zero field R-T - a trademark signature of a metallic state on an insulating bulk film. The grain boundaries in these films, as seen by scanning electron microscopy, present an additional disorder and hence confinement/trapping centers to the surface Dirac states in comparison to the films grown by molecular beam epitaxy and single crystals, which have atomically flat surface. Therefore these films present real test for the topological protection of surface Dirac states and their immunity against localization which is known as Z2 protection. From the magnetoresistance (MR) measurements at low temperatures a sharp and relatively large rise in MR is found a signature of weak -- antilocalization (WAL) -a signature of topologically protected surface states. The WAL analysis of the MR data reveals a phase breaking length of the order of grain size suggesting that grain
机译：我们介绍了由脉冲激光沉积技术生长的块状绝缘和粒状BiSbTeSe2薄膜的厚度和温度相关的磁传输性质。发现这些膜的与温度相关的电阻率（R-T）是绝缘的（d $ ho $ / dT extless 0），并且随着温度从300K到1.8K变化，电阻率的变化是在室温下测得的大小的三倍。在低温条件下施加小的垂直磁场时，R-T会从零磁场R-T向上移动-绝缘体膜上金属状态的商标。通过扫描电子显微镜观察，与通过分子束外延和具有原子平坦表面的单晶生长的膜相比，这些膜中的晶界呈现出附加的无序性，因此限制/俘获中心到表面狄拉克态。因此，这些膜对表面狄拉克态的拓扑保护及其对局部的免疫力（称为Z2保护）提出了真实的测试。根据低温下的磁阻（MR）测量，发现MR急剧且相对较大的上升是弱的-反局部化（WAL）的标志-拓扑受保护的表面态的标志。 MR数据的WAL分析显示出相断长度约为晶粒大小，表明晶粒

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