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首页> 外文期刊>Bulletin of the American Physical Society >APS -APS March Meeting 2017 - Event - Uniform wafer-scale growth of stencil templated, high-quality monolayer MoS$_{2}$
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APS -APS March Meeting 2017 - Event - Uniform wafer-scale growth of stencil templated, high-quality monolayer MoS$_{2}$

机译：APS -APS 2017年3月会议-活动-模板模板化的高质量单层MoS $ _ {2} $的晶圆级均匀增长

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摘要

With the widespread interest in transition metal dichalcogenides and the recent focus on two-dimensional (2D) vertically stacked heterostructures, a need for an inexpensive and reliable method of producing clean, high-quality, patterned 2D materials has emerged. Here, we report on a templated MoS$_{2}$ growth technique by metal sulfurization where Mo is deposited through a SiN stencil onto highly-crystalline sapphire substrates. After sulfurization, the resulting MoS$_{2}$ films are shown to be high-quality with thicknesses that can be tuned layer-by-layer---down to a single layer---through manipulation of the initial Mo deposition time. The quality of these films is confirmed through scanning electron and atomic force microscopies as well as Raman and photoluminescence spectroscopy. This facile growth technique results in templated, high-quality MoS$_{2}$ films with centimeter-scale uniformity, feature sizes down to 100 nm, and offers both a means to easily probe MoS$_{2}$ growth dynamics and a route to 2D stacked heterostructures with arbitrary geometry and pristine interfaces. We will discuss potential applications of this novel growth technique for the development of TMD heterostructures and alloys.
机译：随着人们对过渡金属二卤化物的广泛兴趣以及最近对二维（2D）垂直堆叠异质结构的关注，对生产便宜，可靠的清洁，高质量，带图案的2D材料的方法的需求出现了。在这里，我们报告了一种通过金属硫化的模板化MoS $ _ {2} $生长技术，其中Mo通过SiN模板沉积到高度结晶的蓝宝石衬底上。硫化后，显示出的MoS $ _ {2} $膜是高质量的，其厚度可以通过控制初始Mo沉积时间逐层调整至单层。这些膜的质量通过扫描电子和原子力显微镜以及拉曼光谱和光致发光光谱法得到证实。这种便捷的生长技术可生成具有厘米级均匀度，特征尺寸低至100 nm的模板化高质量MoS $ _ {{2} $}薄膜，并提供了一种轻松探测MoS $ _ {{2} $的生长动力学和通往具有任意几何形状和原始界面的2D堆叠异质结构的途径。我们将讨论这种新型生长技术在TMD异质结构和合金开发中的潜在应用。

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