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首页> 外文期刊>Bulletin of the American Physical Society >APS -2017 Annual Fall Meeting of the APS Ohio-Region Section - Event - Fabrication of Gated Corbino Discs on CVD Grown, Monolayer Graphene
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APS -2017 Annual Fall Meeting of the APS Ohio-Region Section - Event - Fabrication of Gated Corbino Discs on CVD Grown, Monolayer Graphene

机译:APS -2017 APS俄亥俄州地区分部年度秋季会议-活动-在CVD生长的单层石墨烯上制造门控Corbino圆盘

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Using commercially available, CVD grown, monolayer graphene deposited on thermally oxidized silicon wafers, we have fabricated a variety of test structures that are suited for on-chip probing. The test structures include Corbino discs with inner disc diameters ranging from 20 $mu$m to 120 $mu$m and gap lengths ranging from 55 $mu$m to 105 $mu$m. Additionally, a new type of structure that we call the twinaxial Corbino ellipse was fabricated on the same chip with minor axes set to 230 $mu$m and major axes that varied from 276 $mu$m to 460 $mu$m. Inner disc electrodes with diameters ranging from 20 $mu$m to 120 $mu$m were placed at the foci of the elliptical devices. Our fabrication process involved the use a sacrificial aluminum layer, which prevented delamination during metal lift-off processes and kept polymer residues from degrading Ohmic contact quality. Gated current-versus-voltage traces from the Corbino discs revealed Dirac point operation corresponding to gate voltage values, which exhibited dependence on device dimensions and drain-to-source bias, ranging from 5 V to 15 V.
机译:使用可商购的,CVD生长的,沉积在热氧化硅晶圆上的单层石墨烯,我们制造了各种适合芯片上探测的测试结构。测试结构包括Corbino圆盘,其内圆盘直径范围为20微米至120微米,间隙长度范围为55微米至105微米。此外,在同一芯片上制造了一种称为双轴Corbino椭圆形的新型结构,其短轴设置为230μm,长轴从276μm至460μm。将直径范围从20μm至120μm的内盘电极放置在椭圆形装置的焦点处。我们的制造过程涉及使用牺牲性铝层,该层可防止金属剥离过程中的分层,并防止聚合物残留物降低欧姆接触质量。来自Corbino光盘的门控电流对电压曲线显示了与栅极电压值相对应的Dirac点操作,该电压与器件尺寸和漏极至源极偏置有关,范围为5 V至15V。

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