APS -2017 Annual Fall Meeting of the APS Ohio-Region Section - Event - Optical Properties of Gallium Oxide Thin Films

Sundar Isukapati; Tom Oder

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APS -2017 Annual Fall Meeting of the APS Ohio-Region Section - Event - Optical Properties of Gallium Oxide Thin Films

机译：APS -2017 APS俄亥俄州区域的年度秋季会议 - 氧化镓薄膜的事件 - 光学性质

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We report studies conducted on gallium oxide films deposited using magnetron sputtering from a 99.9% pure ceramic target on sapphire substrates. Conditions varied were the process gas using different mixtures of argon/oxygen (0/100, 20/80, 50/50, 80/20 and 100/0), substrate temperature (20 $^o$C to 850 $^o$C) and film thickness (140 nm $extendash$ 860 nm). The films were analyzed by UV-VIS spectrometry, x-ray diffraction and energy dispersive x-ray spectroscopy measurements. The optical measurements revealed high transmission of 92%- 95% and optical bandgaps of 4.4 – 4.9 eV. Data from the x-ray diffraction on the film deposited at 850 $^o$C showed a characteristic peak at 18$^o$ for the oxide material.

机译：我们报告在蓝宝石衬底上从99.9 ％纯陶瓷靶标沉积的氧化镓薄膜上进行的研究。变化的条件是使用不同混合物的氩/氧气（0/100,20 / 80,50 / 50,80 / 50，80/50，80 / 0.0 / 0），衬底温度（20 $ ^ o $ c至850 $ ^ $ c）和膜厚度（140 nm $ 860 nm）。通过UV-Vis光谱法，X射线衍射和能量分散X射线光谱测量分析薄膜。光学测量显示92 ％-95 ％的高传输和4.4 - 4.9eV的光学带隙。从850美元沉积的薄膜上的X射线衍射数据显示氧化物材料的18美元^ O $的特征峰。

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《Bulletin of the American Physical Society》 |2017年第18期|共页
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Sundar Isukapati; Tom Oder;
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APS -2017 Annual Fall Meeting of the APS Ohio-Region Section - Event - Optical Properties of Gallium Oxide Thin Films

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