APS -Annual Meeting of the APS Four Corners Section- Event - Magnetron Sputtering of Arsenic Doped Zinc Oxide Thin Films

Micah Shelley; John Colton; J. Ryan Peterson; Gary Renlund; David Allred

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APS -Annual Meeting of the APS Four Corners Section- Event - Magnetron Sputtering of Arsenic Doped Zinc Oxide Thin Films

机译：APS-anual会议的APS四个角落部分 - 事件 - 砷掺杂氧化锌薄膜的磁控溅射

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Zinc Oxide (ZnO) is a wide band gap semiconductor (3.37 eV) with potential applications in LEDs and military technology. ZnO has native n-type defects, making production of p-type material difficult. In order to form p-type material we have deposited arsenic doped ZnO thin films (extasciitilde 25 microns) by radio frequency magnetron sputtering of a ZnO target onto sapphire substrates coated with evaporated zinc arsenide (ZnAs). Annealing has been employed to improve sample structure. Thin film growth has been refined through characterization by x-ray diffraction techniques, Seebeck effect measurements, and photoluminescence. We will report on the quality of the thin films produced.

机译：氧化锌（ZnO）是一种宽带隙半导体（3.37eV），具有LED和军事技术的潜在应用。 ZnO具有本机N型缺陷，生产P型材料难以。为了形成p型材料，我们已经通过ZnO靶射频磁控溅射沉积砷掺杂的ZnO薄膜（EXTASCIITEDE 25微米），在涂覆有蒸发的锌砷（ZnAs）的蓝宝石底物上。已经采用退火来改善样品结构。通过X射线衍射技术，塞贝克效应测量和光致发光来精制薄膜生长。我们将报告生产的薄膜的质量。

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《Bulletin of the American Physical Society》 |2017年第17期|共页
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Micah Shelley; John Colton; J. Ryan Peterson; Gary Renlund; David Allred;
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1. APS -Annual Meeting of the APS Four Corners Section- Event - Photoluminescence of arsenic-doped zinc oxide thin films [J] . J. Ryan Peterson, Micah Shelley, John S. Colton, Bulletin of the American Physical Society . 2017,第17期

机译：APS-APS四角分会年会-活动-掺砷氧化锌薄膜的光致发光
2. APS -Annual Meeting of the APS Four Corners Section- Event - Transport and magnetic properties of thin films fabricated by magnetron sputtering [J] . Hiroto Kato, Ty Newhouse-Illige, Hamid Almasi, Bulletin of the American Physical Society . 2017,第17期

机译：APS-APS四角分会年会-活动-磁控溅射制备的薄膜的传输和磁性
3. APS -Annual Meeting of the APS Four Corners Section- Event - Transport and magnetic properties of thin films fabricated by magnetron sputtering [J] . Hiroto Kato, Ty Newhouse-Illige, Hamid Almasi, Bulletin of the American Physical Society . 2017,第17期

机译：APS-APS四角分会年会-活动-磁控溅射制备的薄膜的传输和磁性
4. ANNEALING EFFECTS ON TITANIA DOPED ZINC OXIDE (ZNO:TI) AND GALLIUM DOPED ZINC OXIDE (ZNO:GA) THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING [C] . B. Heimke, U. Hartung, T. Kopte European Photovoltaic Solar Energy Conference and Exhibition . 2011

机译：直流磁控溅射制备二氧化钛掺杂的氧化锌（ZNO：TI）和镓掺杂的氧化锌（ZNO：GA）薄膜的退火效应
5. The Development of Novel-Single Source Precursors for the Growth of Zinc Oxide Thin Films via Atmospheric Pressure Metal Organic Chemical Vapor Deposition (AP-MOCVD) For Applications in Microelectronic Devices. [D] . Johnson, Keneshia Onekia. 2013

机译：通过大气压金属有机化学气相沉积（AP-MOCVD）开发用于氧化锌薄膜生长的新型单源前驱体，用于微电子器件。
6. Spatially Resolved Optoelectronic Properties of Al-Doped Zinc Oxide Thin Films Deposited by Radio-Frequency Magnetron Plasma Sputtering Without Substrate Heating [O] . Eugen Stamate 2020

机译：在不加热衬底的情况下通过射频磁控等离子体溅射沉积的铝掺杂氧化锌薄膜的空间分辨光电性能
7. Arsenic doped p -type zinc oxide films grown by radio frequency magnetron sputtering [O] . To CK, Beling CD, Zhong YC, 2009

机译：射频磁控溅射生长砷掺杂p型氧化锌薄膜

APS -Annual Meeting of the APS Four Corners Section- Event - Magnetron Sputtering of Arsenic Doped Zinc Oxide Thin Films

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