...
首页> 外文期刊>Bulletin of the American Physical Society >APS -APS March Meeting 2017 - Event - Microwave properties of epitaxial superconductor-semiconductor interfaces
【24h】

APS -APS March Meeting 2017 - Event - Microwave properties of epitaxial superconductor-semiconductor interfaces

机译:APS -APS 3月会议2017 - 事件 - 外延超导体 - 半导体接口的微波特性

获取原文
           

摘要

A key challenge in fabrication of hybrid semiconductor-superconductor devices is forming highly transparent contacts between the active electrons in the semiconductor and the superconducting metal. It has been shown that a near perfect interface and a highly transparent contact can be achieved using epitaxial growth of aluminum on InAs [1]. We have grown in-situ aluminum thin films on InAs (100), InAs (110), InAs (111), and Si (111) after oxide removal and regrowth. Guided by our numerical studies, we have isolated the optimal growth orientations to minimize the strain energy at the interface. The interfaces are studied using x-ray diffraction patterns and transmission electron microscope imaging. Field-effect Josephson junctions have been fabricated and studied in microwave regime.[1] Shabani et al. PRB 2016.
机译:制造混合半导体超导体器件的一个关键挑战在半导体和超导金属之间形成高度透明的触点。已经证明,可以使用INAS上的铝的外延生长来实现近乎完美的界面和高度透明的接触[1]。在氧化物去除和再生后,我们在InAs(100),InAs(110),InAs(111)和Si(111)上成立就地铝薄膜。通过我们的数值研究指导,我们已经隔离了最佳的生长方向,以最小化界面处的应变能量。使用X射线衍射图案和透射电子显微镜成像研究界面。在微波制度中制造和研究了现场效果Josephson结。[1] Shabani等人。 PRB 2016。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号