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首页> 外文期刊>Bulletin of the American Physical Society >APS -APS March Meeting 2017 - Event - High-Resolution Structural and Electronic Properties of Epitaxial Topological Crystalline Insulator Films
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APS -APS March Meeting 2017 - Event - High-Resolution Structural and Electronic Properties of Epitaxial Topological Crystalline Insulator Films

机译：APS -APS 2017年3月会议-活动-外延拓扑晶体绝缘膜的高分辨率结构和电子性能

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摘要

Revealing the local electronic properties of surfaces and their link to structural properties is an important problem for topological crystalline insulators (TCI) in which metallic surface states are protected by crystal symmetry. The microstructure and electronic properties of TCI SnTe film surfaces grown by molecular beam epitaxy were characterized using scanning probe microscopy. These results reveal the influence of various defects on the electronic properties: tilt boundaries leading to dislocation arrays that serve as periodic nucleation sites for pit growth; screw dislocations, and point defects. These features have varying length scale and display variations in the electronic structure of the surface, which are mapped with scanning tunneling microscopy images as standing waves superimposed on atomic scale images of the surface topography that consequently shape the wave patterns. Since the growth process results in symmetry breaking defects that patterns the topological states, we propose that the scanning probe tip can pattern the surface and electronic structure and enable the fabrication of topological devices on the SnTe surface.
机译：对于表面晶体受到对称性保护的拓扑晶体绝缘体（TCI），揭示表面的局部电子特性及其与结构特性的联系是一个重要的问题。利用扫描探针显微镜对分子束外延生长的TCI SnTe薄膜表面的微观结构和电子性能进行了表征。这些结果揭示了各种缺陷对电子性能的影响：倾斜边界导致位错阵列，这些位错阵列用作凹坑生长的周期性成核位点;螺钉错位和点缺陷。这些特征具有变化的长度比例并在表面的电子结构中显示变化，这些特征与扫描隧道显微镜图像映射为驻波，叠加在表面形貌的原子尺度图像上，从而形成波形。由于生长过程会导致对称破坏缺陷，从而形成拓扑状态的图案，因此我们建议扫描探针尖端可以对表面和电子结构进行图案化，并能够在SnTe表面上制造拓扑器件。

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