Hetero-epitaxial growth of ZnO thin films on sapphire (1120) substrate by means of AP-HVPE

机译：通过AP-HVPE通过AP-HVPE在蓝宝石（1120）衬底上的ZnO薄膜的杂外延生长

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Zinc oxide (ZnO) is a semiconductor with a large band-gap of 3.4 eV and a large excitonic binding energy of 60 meV,making it a potential candidate for UV-light-emitting/detecting devices with high quantum efficiency.In a previous paper,we reported that high-quality ZnO epitaxial layers can be grown successfully on a sapphire (0001) substrate by atmospheric pressure halide vapor phase epitaxy (AP-HVPE).In this work,reports the results of an investigation into ZnO thin films on a sapphire (1120) substrate prepared by AP-HVPE.

机译：氧化锌（ZnO）是具有3.4eV的大带间隙的半导体，并且具有60meV的大的激子结合能，使其成为具有高量子效率的UV发光/检测装置的潜在候选。在前一篇论文中我们报道，通过大气压卤化物气相外延（AP-HVPE），可以在蓝宝石（0001）衬底上成功生长高质量的ZnO外延层。在这项工作中，将调查调查的结果报告为A上的ZnO薄膜蓝宝石（1120）底物由AP-HVPE制备。

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《The Meeting of the Electrochemical Society》|2002年||共1页
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Kouichi Hashimoto; Naoyuki Takahashi; Takato Nakamura; Hajime Yamamoto;
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1. Growth of high-quality ZnO thin films on (1120) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy [J] . Ping Ding, Xinhua Pan, Zhizhen Ye, Applied Physics . 2013,第4期

机译：等离子体辅助分子束外延在（1120）a面蓝宝石衬底上生长高质量ZnO薄膜
2. Comparison of non-polar ZnO (1120) films deposited on single crystal ZnO (1120) and sapphire (0112) substrates [J] . Y. Kashiwaba, T. Abe, S. Onodera, Journal of Crystal Growth . 2007,第Jan期

机译：在单晶ZnO（1120）和蓝宝石（0112）衬底上沉积的非极性ZnO（1120）膜的比较
3. Thermal conductivity of hetero-epitaxial ZnO thin films on c- and r-plane sapphire substrates: Thickness and grain size effect [J] . Yamashita Yuichiro, Honda Kaho, Yagi Takashi, Journal of Applied Physics . 2019,第3期

机译：c面和r面蓝宝石衬底上异质外延ZnO薄膜的热导率：厚度和晶粒尺寸效应
4. Hetero-epitaxial growth of ZnO thin films on sapphire (1120) substrate by means of AP-HVPE [C] . Kouichi Hashimoto, Naoyuki Takahashi, Takato Nakamura, The Meeting of the Electrochemical Society . 2002

机译：通过AP-HVPE通过AP-HVPE在蓝宝石（1120）衬底上的ZnO薄膜的杂外延生长
5. Growth of heteroepitaxial single crystal lead magnesium niobate-lead titanate thin films on r-plane sapphire substrates. [D] . Sunder, Madhana. 2009

机译：在r面蓝宝石衬底上生长异质外延单晶铌酸铅镁钛酸铅薄膜。
6. Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications [O] . Florian Bartoli, Jérémy Streque, Jaafar Ghanbaja, 2020

机译：SC0.09Al0.91N和SC0.18A10.82N的外延生长通过磁控溅射对表面声波应用的磁控溅射薄膜
7. Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates [O] . Liu, C., Chang, S. H., Noh, T. W., 2006

机译：初始生长行为及其微观结构特征蓝宝石（0001）衬底上的异质外延ZnO薄膜

Hetero-epitaxial growth of ZnO thin films on sapphire (1120) substrate by means of AP-HVPE

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